Generic nano-imprint process for fabrication of nanowire arrays

A. Pierret, M. Hocevar, S.L. Diedenhofen, R.E. Algra, E. Vlieg, E.C. Timmering, M.A. Verschuuren, W.G.G. Immink, M.A. Verheijen, E.P.A.M. Bakkers

Research output: Contribution to journalArticleAcademicpeer-review

70 Citations (Scopus)


A generic process has been developed to grow nearly defect-free arrays of (heterostructured) InP and GaP nanowires. Soft nano-imprint lithography has been used to pattern gold particle arrays on full 2inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 °C for InP and 700 °C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.
Original languageEnglish
Article number065305
Pages (from-to)065305-1/6
Number of pages6
Issue number6
Publication statusPublished - 2010


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