Generic nano-imprint process for fabrication of nanowire arrays

A. Pierret; M. Hocevar; S.L. Diedenhofen; R.E. Algra; E. Vlieg; E.C. Timmering; M.A. Verschuuren; W.G.G. Immink; M.A. Verheijen; E.P.A.M. Bakkers

doi:10.1088/0957-4484/21/6/065305

Generic nano-imprint process for fabrication of nanowire arrays

A. Pierret, M. Hocevar, S.L. Diedenhofen, R.E. Algra, E. Vlieg, E.C. Timmering, M.A. Verschuuren, W.G.G. Immink, M.A. Verheijen, E.P.A.M. Bakkers

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

67 Citations (Scopus)

Abstract

A generic process has been developed to grow nearly defect-free arrays of (heterostructured) InP and GaP nanowires. Soft nano-imprint lithography has been used to pattern gold particle arrays on full 2inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 °C for InP and 700 °C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.

Original language	English
Article number	065305
Pages (from-to)	065305-1/6
Number of pages	6
Journal	Nanotechnology
Volume	21
Issue number	6
DOIs	https://doi.org/10.1088/0957-4484/21/6/065305
Publication status	Published - 2010

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abstract = "A generic process has been developed to grow nearly defect-free arrays of (heterostructured) InP and GaP nanowires. Soft nano-imprint lithography has been used to pattern gold particle arrays on full 2inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 °C for InP and 700 °C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.",

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T1 - Generic nano-imprint process for fabrication of nanowire arrays

AU - Pierret, A.

AU - Hocevar, M.

AU - Diedenhofen, S.L.

AU - Algra, R.E.

AU - Vlieg, E.

AU - Timmering, E.C.

AU - Verschuuren, M.A.

AU - Immink, W.G.G.

AU - Verheijen, M.A.

AU - Bakkers, E.P.A.M.

PY - 2010

Y1 - 2010

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AB - A generic process has been developed to grow nearly defect-free arrays of (heterostructured) InP and GaP nanowires. Soft nano-imprint lithography has been used to pattern gold particle arrays on full 2inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 °C for InP and 700 °C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.

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DO - 10.1088/0957-4484/21/6/065305

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