Abstract
A generic process has been developed to grow nearly defect-free arrays of (heterostructured) InP and GaP nanowires. Soft nano-imprint lithography has been used to pattern gold particle arrays on full 2inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 °C for InP and 700 °C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.
Original language | English |
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Article number | 065305 |
Pages (from-to) | 065305-1/6 |
Number of pages | 6 |
Journal | Nanotechnology |
Volume | 21 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2010 |