Ge Segregation during molecular beam epitaxial growth of Si1-xGex/Si layers

D. J. Gravesteijn; P. C. Zalm; G. F.A. van de Walle; C. J. Vriezema; A. A. van Gorkum; L. J. van Ijzendoorn

doi:10.1016/0040-6090(89)90444-6

Ge Segregation during molecular beam epitaxial growth of Si_1-xGe_x/Si layers

D. J. Gravesteijn, P. C. Zalm, G. F.A. van de Walle, C. J. Vriezema, A. A. van Gorkum, L. J. van Ijzendoorn

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The growth of pseudomorphic Si_1-xGe_x layers (0.08 ≤ x ≤ 0.33) on Si (100) was studied by means of secondary ion mass spectroscopy and Rutherford backscattering spectrometry with glancing angle detection. The interfaces under growth conditions for epitaxy (substrate temperatures between 470 and 560 °C) were never atomically sharp but showed asymmetric smearing of the germanium towards the surface. The segregation is characterized by an inverse slope in the germanium profile of 17 nm per decade. The total amount of segragated germanium corresponds to between 0.2 and 0.5 monolayer. At lower temperatures the layers become rough, decreasing the crystalline quality, however, the interfaces as detected by secondary ion mass spectroscopy become much sharper. It is proposed that the smearing is due to a germanium ad-layer that is formed during the Si_1-xGe_x deposition and is incorporated slowly during further silicon growth.

Original language	English
Pages (from-to)	191-196
Number of pages	6
Journal	Thin Solid Films
Volume	183
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(89)90444-6
Publication status	Published - 30 Dec 1989
Externally published	Yes

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@article{efd3ab6a19b140bd9c05e77bd30856e3,

title = "Ge Segregation during molecular beam epitaxial growth of Si1-xGex/Si layers",

abstract = "The growth of pseudomorphic Si1-xGex layers (0.08 ≤ x ≤ 0.33) on Si (100) was studied by means of secondary ion mass spectroscopy and Rutherford backscattering spectrometry with glancing angle detection. The interfaces under growth conditions for epitaxy (substrate temperatures between 470 and 560 °C) were never atomically sharp but showed asymmetric smearing of the germanium towards the surface. The segregation is characterized by an inverse slope in the germanium profile of 17 nm per decade. The total amount of segragated germanium corresponds to between 0.2 and 0.5 monolayer. At lower temperatures the layers become rough, decreasing the crystalline quality, however, the interfaces as detected by secondary ion mass spectroscopy become much sharper. It is proposed that the smearing is due to a germanium ad-layer that is formed during the Si1-xGex deposition and is incorporated slowly during further silicon growth.",

author = "Gravesteijn, {D. J.} and Zalm, {P. C.} and {van de Walle}, {G. F.A.} and Vriezema, {C. J.} and {van Gorkum}, {A. A.} and {van Ijzendoorn}, {L. J.}",

year = "1989",

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doi = "10.1016/0040-6090(89)90444-6",

language = "English",

volume = "183",

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journal = "Thin Solid Films",

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T1 - Ge Segregation during molecular beam epitaxial growth of Si1-xGex/Si layers

AU - Gravesteijn, D. J.

AU - Zalm, P. C.

AU - van de Walle, G. F.A.

AU - Vriezema, C. J.

AU - van Gorkum, A. A.

AU - van Ijzendoorn, L. J.

PY - 1989/12/30

Y1 - 1989/12/30

N2 - The growth of pseudomorphic Si1-xGex layers (0.08 ≤ x ≤ 0.33) on Si (100) was studied by means of secondary ion mass spectroscopy and Rutherford backscattering spectrometry with glancing angle detection. The interfaces under growth conditions for epitaxy (substrate temperatures between 470 and 560 °C) were never atomically sharp but showed asymmetric smearing of the germanium towards the surface. The segregation is characterized by an inverse slope in the germanium profile of 17 nm per decade. The total amount of segragated germanium corresponds to between 0.2 and 0.5 monolayer. At lower temperatures the layers become rough, decreasing the crystalline quality, however, the interfaces as detected by secondary ion mass spectroscopy become much sharper. It is proposed that the smearing is due to a germanium ad-layer that is formed during the Si1-xGex deposition and is incorporated slowly during further silicon growth.

AB - The growth of pseudomorphic Si1-xGex layers (0.08 ≤ x ≤ 0.33) on Si (100) was studied by means of secondary ion mass spectroscopy and Rutherford backscattering spectrometry with glancing angle detection. The interfaces under growth conditions for epitaxy (substrate temperatures between 470 and 560 °C) were never atomically sharp but showed asymmetric smearing of the germanium towards the surface. The segregation is characterized by an inverse slope in the germanium profile of 17 nm per decade. The total amount of segragated germanium corresponds to between 0.2 and 0.5 monolayer. At lower temperatures the layers become rough, decreasing the crystalline quality, however, the interfaces as detected by secondary ion mass spectroscopy become much sharper. It is proposed that the smearing is due to a germanium ad-layer that is formed during the Si1-xGex deposition and is incorporated slowly during further silicon growth.

UR - http://www.scopus.com/inward/record.url?scp=45249128116&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(89)90444-6

DO - 10.1016/0040-6090(89)90444-6

M3 - Article

SN - 0040-6090

VL - 183

SP - 191

EP - 196

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Ge Segregation during molecular beam epitaxial growth of Si_1-xGe_x/Si layers

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