Gate-variable light absorption and emission in a semiconducting carbon nanotube

M. Steiner; M. Freitag; V. Perebeinos; A. Naumov; J.P. Small; A.A. Bol; Ph. Avouris

doi:10.1021/nl9016804

Gate-variable light absorption and emission in a semiconducting carbon nanotube

M. Steiner, M. Freitag, V. Perebeinos, A. Naumov, J.P. Small, A.A. Bol, Ph. Avouris

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Abstract

We investigate the gate field dependence of light absorption and emission of an individual, suspended semiconducting carbon nanotube using Raman and photoluminescence spectroscopies. We find a strong reduction in the absorption strength and a red shift of the E33 state of the nanotube with increasing gate field. The photoluminescence from the E11 state is quenched even stronger. We explain these observations in terms of field-doping and its effects on both the radiative and nonradiative decay rates of the excitons. Thus, gate field-induced doping constitutes an effective means of controlling the optical properties of carbon nanotube devices.

Original language	English
Pages (from-to)	3477-3481
Journal	Nano Letters
Volume	9
Issue number	10
DOIs	https://doi.org/10.1021/nl9016804
Publication status	Published - 2009

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@article{e5b7abfefbcf418fb55d9650b6b8b01c,

title = "Gate-variable light absorption and emission in a semiconducting carbon nanotube",

abstract = "We investigate the gate field dependence of light absorption and emission of an individual, suspended semiconducting carbon nanotube using Raman and photoluminescence spectroscopies. We find a strong reduction in the absorption strength and a red shift of the E33 state of the nanotube with increasing gate field. The photoluminescence from the E11 state is quenched even stronger. We explain these observations in terms of field-doping and its effects on both the radiative and nonradiative decay rates of the excitons. Thus, gate field-induced doping constitutes an effective means of controlling the optical properties of carbon nanotube devices.",

author = "M. Steiner and M. Freitag and V. Perebeinos and A. Naumov and J.P. Small and A.A. Bol and Ph. Avouris",

year = "2009",

doi = "10.1021/nl9016804",

language = "English",

volume = "9",

pages = "3477--3481",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "10",

}

TY - JOUR

T1 - Gate-variable light absorption and emission in a semiconducting carbon nanotube

AU - Steiner, M.

AU - Freitag, M.

AU - Perebeinos, V.

AU - Naumov, A.

AU - Small, J.P.

AU - Bol, A.A.

AU - Avouris, Ph.

PY - 2009

Y1 - 2009

N2 - We investigate the gate field dependence of light absorption and emission of an individual, suspended semiconducting carbon nanotube using Raman and photoluminescence spectroscopies. We find a strong reduction in the absorption strength and a red shift of the E33 state of the nanotube with increasing gate field. The photoluminescence from the E11 state is quenched even stronger. We explain these observations in terms of field-doping and its effects on both the radiative and nonradiative decay rates of the excitons. Thus, gate field-induced doping constitutes an effective means of controlling the optical properties of carbon nanotube devices.

AB - We investigate the gate field dependence of light absorption and emission of an individual, suspended semiconducting carbon nanotube using Raman and photoluminescence spectroscopies. We find a strong reduction in the absorption strength and a red shift of the E33 state of the nanotube with increasing gate field. The photoluminescence from the E11 state is quenched even stronger. We explain these observations in terms of field-doping and its effects on both the radiative and nonradiative decay rates of the excitons. Thus, gate field-induced doping constitutes an effective means of controlling the optical properties of carbon nanotube devices.

U2 - 10.1021/nl9016804

DO - 10.1021/nl9016804

M3 - Article

C2 - 19637914

VL - 9

SP - 3477

EP - 3481

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 10

ER -