Gate-variable light absorption and emission in a semiconducting carbon nanotube

M. Steiner, M. Freitag, V. Perebeinos, A. Naumov, J.P. Small, A.A. Bol, Ph. Avouris

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    56 Citations (Scopus)
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    Abstract

    We investigate the gate field dependence of light absorption and emission of an individual, suspended semiconducting carbon nanotube using Raman and photoluminescence spectroscopies. We find a strong reduction in the absorption strength and a red shift of the E33 state of the nanotube with increasing gate field. The photoluminescence from the E11 state is quenched even stronger. We explain these observations in terms of field-doping and its effects on both the radiative and nonradiative decay rates of the excitons. Thus, gate field-induced doping constitutes an effective means of controlling the optical properties of carbon nanotube devices.
    Original languageEnglish
    Pages (from-to)3477-3481
    JournalNano Letters
    Volume9
    Issue number10
    DOIs
    Publication statusPublished - 2009

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