Abstract
This work introduces a novel gate driver for use with wide-bandgap devices in high-power, high-precision applications. As power amplifiers move to higher operating frequencies, the dead time becomes a significant portion of the overall switching period, resulting in reduced control precision and increased output distortion. The developed driver allows to minimize the dead time inserted between the switching actions of a half-bridge. A prototype using 650 V gallium nitride transistors is developed to evaluate the concept. A low-cost digital isolator connects the high and low-side drivers and prevents cross conduction. As long as one switch is conducting, the other is prevented from turning on. This automatically ensures a minimal dead time determined by the isolators propagation delay. Each driver is powered by an isolated unipolar supply and a differential drive scheme provides negative gate-source voltages to safely turn off the transistors despite high switching speeds. The prototype is tested in a double pulse setup at 400 V and reaches dead times as low as 14 ns.
Original language | English |
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Title of host publication | APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 1593-1598 |
Number of pages | 6 |
ISBN (Electronic) | 9781728148298 |
DOIs | |
Publication status | Published - 25 Jun 2020 |
Event | 35th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2020 - Ernest N. Morial Convention Center, New Orleans, United States Duration: 15 Mar 2020 → 19 Mar 2020 Conference number: 35 http://www.apec-conf.org/about |
Conference
Conference | 35th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2020 |
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Abbreviated title | APEC 2020 |
Country/Territory | United States |
City | New Orleans |
Period | 15/03/20 → 19/03/20 |
Internet address |