Gate-bias assisted charge injection in organic field-effect transistors

J J. Brondijk, F. Torricelli, E.C.P. Smits, P.W.M. Blom, D.M. Leeuw, de

Research output: Contribution to journalArticleAcademicpeer-review

54 Citations (Scopus)

Abstract

The charge injection barriers in organic field-effect transistors (OFETs) seem to be far less critical as compared to organic light-emitting diodes (OLEDs). Counter intuitively; we show that the origin is image-force lowering of the barrier due to the gate bias at the source contact; although the corresponding gate field is perpendicular to the channel current. In coplanar OFETs; injection barriers up to 1 eV can be surmounted by increasing the gate bias; enabling extraction of bulk transport parameters in this regime. For staggered transistors; however; the injection is gate-assisted only until the gate bias is screened by the accumulation channel opposite to the source contact. The gate-assisted injection is supported by two-dimensional numerical charge transport simulations that reproduce the gate-bias dependence of the contact resistance and the typical S-shaped output curves as observed for OFETs with high injection barriers.
Original languageEnglish
Pages (from-to)1526-1531
Number of pages6
JournalOrganic Electronics
Volume13
Issue number9
DOIs
Publication statusPublished - 2012

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