Gas sensing with self-assembled monolayer field-effect transistors

A. Andringa; M. Spijkman; E.C.P. Smits; S.G.J. Mathijssen; P.A. Hal, van; S. Setayesh; N.P. Willard; O.V. Borshchev; S.A. Ponomarenko; P.W.M. Blom; D.M. Leeuw, de

doi:10.1016/j.orgel.2010.02.007

Gas sensing with self-assembled monolayer field-effect transistors

A. Andringa, M. Spijkman, E.C.P. Smits, S.G.J. Mathijssen, P.A. Hal, van, S. Setayesh, N.P. Willard, O.V. Borshchev, S.A. Ponomarenko, P.W.M. Blom, D.M. Leeuw, de

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Abstract

A new sensitive gas sensor based on a self-assembled monolayer field-effect transistor (SAMFET) was used to detect the biomarker nitric oxide. A SAMFET based sensor is highly sensitive because the analyte and the active channel are separated by only one monolayer. SAMFETs were functionalised for direct NO detection using iron porphyrin as a specific receptor. Upon exposure to NO a threshold voltage shift towards positive gate biases was observed. The sensor response was examined as a function of NO concentration. High sensitivity has been demonstrated by detection of ppb concentrations of NO. Preliminary measurements have been performed to determine the selectivity.

Original language	English
Pages (from-to)	895-898
Number of pages	4
Journal	Organic Electronics
Volume	11
Issue number	5
DOIs	https://doi.org/10.1016/j.orgel.2010.02.007
Publication status	Published - 2010

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title = "Gas sensing with self-assembled monolayer field-effect transistors",

abstract = "A new sensitive gas sensor based on a self-assembled monolayer field-effect transistor (SAMFET) was used to detect the biomarker nitric oxide. A SAMFET based sensor is highly sensitive because the analyte and the active channel are separated by only one monolayer. SAMFETs were functionalised for direct NO detection using iron porphyrin as a specific receptor. Upon exposure to NO a threshold voltage shift towards positive gate biases was observed. The sensor response was examined as a function of NO concentration. High sensitivity has been demonstrated by detection of ppb concentrations of NO. Preliminary measurements have been performed to determine the selectivity.",

author = "A. Andringa and M. Spijkman and E.C.P. Smits and S.G.J. Mathijssen and {Hal, van}, P.A. and S. Setayesh and N.P. Willard and O.V. Borshchev and S.A. Ponomarenko and P.W.M. Blom and {Leeuw, de}, D.M.",

year = "2010",

doi = "10.1016/j.orgel.2010.02.007",

language = "English",

volume = "11",

pages = "895--898",

journal = "Organic Electronics",

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T1 - Gas sensing with self-assembled monolayer field-effect transistors

AU - Andringa, A.

AU - Spijkman, M.

AU - Smits, E.C.P.

AU - Mathijssen, S.G.J.

AU - Hal, van, P.A.

AU - Setayesh, S.

AU - Willard, N.P.

AU - Borshchev, O.V.

AU - Ponomarenko, S.A.

AU - Blom, P.W.M.

AU - Leeuw, de, D.M.

PY - 2010

Y1 - 2010

N2 - A new sensitive gas sensor based on a self-assembled monolayer field-effect transistor (SAMFET) was used to detect the biomarker nitric oxide. A SAMFET based sensor is highly sensitive because the analyte and the active channel are separated by only one monolayer. SAMFETs were functionalised for direct NO detection using iron porphyrin as a specific receptor. Upon exposure to NO a threshold voltage shift towards positive gate biases was observed. The sensor response was examined as a function of NO concentration. High sensitivity has been demonstrated by detection of ppb concentrations of NO. Preliminary measurements have been performed to determine the selectivity.

AB - A new sensitive gas sensor based on a self-assembled monolayer field-effect transistor (SAMFET) was used to detect the biomarker nitric oxide. A SAMFET based sensor is highly sensitive because the analyte and the active channel are separated by only one monolayer. SAMFETs were functionalised for direct NO detection using iron porphyrin as a specific receptor. Upon exposure to NO a threshold voltage shift towards positive gate biases was observed. The sensor response was examined as a function of NO concentration. High sensitivity has been demonstrated by detection of ppb concentrations of NO. Preliminary measurements have been performed to determine the selectivity.

U2 - 10.1016/j.orgel.2010.02.007

DO - 10.1016/j.orgel.2010.02.007

M3 - Article

SN - 1566-1199

VL - 11

SP - 895

EP - 898

JO - Organic Electronics

JF - Organic Electronics

IS - 5

ER -

Gas sensing with self-assembled monolayer field-effect transistors

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