Gas sensing with self-assembled monolayer field-effect transistors

A. Andringa, M. Spijkman, E.C.P. Smits, S.G.J. Mathijssen, P.A. Hal, van, S. Setayesh, N.P. Willard, O.V. Borshchev, S.A. Ponomarenko, P.W.M. Blom, D.M. Leeuw, de

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Abstract

A new sensitive gas sensor based on a self-assembled monolayer field-effect transistor (SAMFET) was used to detect the biomarker nitric oxide. A SAMFET based sensor is highly sensitive because the analyte and the active channel are separated by only one monolayer. SAMFETs were functionalised for direct NO detection using iron porphyrin as a specific receptor. Upon exposure to NO a threshold voltage shift towards positive gate biases was observed. The sensor response was examined as a function of NO concentration. High sensitivity has been demonstrated by detection of ppb concentrations of NO. Preliminary measurements have been performed to determine the selectivity.
Original languageEnglish
Pages (from-to)895-898
Number of pages4
JournalOrganic Electronics
Volume11
Issue number5
DOIs
Publication statusPublished - 2010

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