GaAs-AlGaAs multiple quantum well structures and high-power lasers grown by metalorganic vapor phase epitaxy (MOVPE) in a chimney reactor.

Fred Roozeboom; André Sikkema; Laurens W. Molenkamp

doi:10.1117/12.941181

GaAs-AlGaAs multiple quantum well structures and high-power lasers grown by metalorganic vapor phase epitaxy (MOVPE) in a chimney reactor.

Fred Roozeboom, André Sikkema, Laurens W. Molenkamp

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

GaAs/AlGaAs GRIN-SCH type multiple quantum well lasers with 4 wells of 11 nm GaAs, grown in an MOVPE chimney reactor, exhibit an output power as high as 110 mW/facet (CW, 30°C; 5 μm stripe) and 1.3 W/facet (pulsed, 30°C; 53 μm stripe) until catastrophic optical damage occurs. 2000 hours life tests conducted at 60°C and 15 mW CW show no noticeable degradation for the 5 μm stripe laser with a reflective coating on both facets. Raman spectroscopy on similar multiple quantum well structures with 65 GaAs wells is used to ascertain that the wells have minimum residual aluminum-content.

Original language	English
Pages (from-to)	27-33
Number of pages	7
Journal	Proceedings of SPIE
Volume	800
DOIs	https://doi.org/10.1117/12.941181
Publication status	Published - 22 Sept 1987
Externally published	Yes

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abstract = "GaAs/AlGaAs GRIN-SCH type multiple quantum well lasers with 4 wells of 11 nm GaAs, grown in an MOVPE chimney reactor, exhibit an output power as high as 110 mW/facet (CW, 30°C; 5 μm stripe) and 1.3 W/facet (pulsed, 30°C; 53 μm stripe) until catastrophic optical damage occurs. 2000 hours life tests conducted at 60°C and 15 mW CW show no noticeable degradation for the 5 μm stripe laser with a reflective coating on both facets. Raman spectroscopy on similar multiple quantum well structures with 65 GaAs wells is used to ascertain that the wells have minimum residual aluminum-content.",

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GaAs-AlGaAs multiple quantum well structures and high-power lasers grown by metalorganic vapor phase epitaxy (MOVPE) in a chimney reactor.

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