Fundamental limitations for electroluminescence in organic dual-gate field-effect transistors

W.S.C. Roelofs; M.-J. Spijkman; S.G.J. Mathijssen; R.A.J. Janssen; D.M. Leeuw, de; M. Kemerink

doi:10.1002/adma.201305215

Fundamental limitations for electroluminescence in organic dual-gate field-effect transistors

W.S.C. Roelofs
, M.-J. Spijkman
, S.G.J. Mathijssen
, R.A.J. Janssen
, D.M. Leeuw, de
, M. Kemerink

Materials to Optoelectronic Devices

Research output: Contribution to journal › Article › Academic › peer-review

16 Citations (Scopus)

7 Downloads (Pure)

Abstract

A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English
Pages (from-to)	4450-4455
Journal	Advanced Materials
Volume	26
Issue number	26
DOIs	https://doi.org/10.1002/adma.201305215
Publication status	Published - 2014

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10.1002/adma.201305215

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title = "Fundamental limitations for electroluminescence in organic dual-gate field-effect transistors",

abstract = "A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission. {\textcopyright} 2014 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

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AU - Roelofs, W.S.C.

AU - Spijkman, M.-J.

AU - Mathijssen, S.G.J.

AU - Janssen, R.A.J.

AU - Leeuw, de, D.M.

AU - Kemerink, M.

PY - 2014

Y1 - 2014

N2 - A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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DO - 10.1002/adma.201305215

M3 - Article

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VL - 26

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EP - 4455

JO - Advanced Materials

JF - Advanced Materials

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ER -

Fundamental limitations for electroluminescence in organic dual-gate field-effect transistors

Abstract

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