Fundamental limitations for electroluminescence in organic dual-gate field-effect transistors

W.S.C. Roelofs, M.-J. Spijkman, S.G.J. Mathijssen, R.A.J. Janssen, D.M. Leeuw, de, M. Kemerink

Research output: Contribution to journalArticleAcademicpeer-review

10 Citations (Scopus)
3 Downloads (Pure)

Abstract

A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish
Pages (from-to)4450-4455
JournalAdvanced Materials
Volume26
Issue number26
DOIs
Publication statusPublished - 2014

Fingerprint

Dive into the research topics of 'Fundamental limitations for electroluminescence in organic dual-gate field-effect transistors'. Together they form a unique fingerprint.

Cite this