Abstract
The strain relaxation in low mismatched InxAl1-xAs layers has been studied by triple axis x-ray diffraction, transmission electron microscopy, and photoluminescence. Using a two step buffer, a fully relaxed top layer has been grown by adapting the composition and thickness of a first "strained layer." The threading dislocation density in the top layer is below 106/cm2 and strain is relaxed at the substrate/first layer interface by misfit dislocations. This scheme is a promising method to limit the thickness of buffer layers and obtain fully relaxed pseudosubstrates.
Original language | English |
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Article number | 016102 |
Pages (from-to) | 016102-1/3 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 107 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2010 |