Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer

S.R. Plissard, C. Coinon, Y. Androussi, X. Wallart

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)
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Abstract

The strain relaxation in low mismatched InxAl1-xAs layers has been studied by triple axis x-ray diffraction, transmission electron microscopy, and photoluminescence. Using a two step buffer, a fully relaxed top layer has been grown by adapting the composition and thickness of a first "strained layer." The threading dislocation density in the top layer is below 106/cm2 and strain is relaxed at the substrate/first layer interface by misfit dislocations. This scheme is a promising method to limit the thickness of buffer layers and obtain fully relaxed pseudosubstrates.
Original languageEnglish
Article number016102
Pages (from-to)016102-1/3
Number of pages3
JournalJournal of Applied Physics
Volume107
Issue number1
DOIs
Publication statusPublished - 2010

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