Fully-integrated DECT/bluetooth multi-band LNA in 0.18 μm CMOS

Vojkan Vidojkovic; Johan Van Der Tang; Eric Hanssen; Arjan J. Leeuwenburgh; Arthur Van Roermund

Fully-integrated DECT/bluetooth multi-band LNA in 0.18 μm CMOS

Vojkan Vidojkovic
, Johan Van Der Tang
, Eric Hanssen
, Arjan J. Leeuwenburgh
, Arthur Van Roermund

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

The design of a multi-band low noise amplifier (LNA) is the first obstacle towards the design of a multi-standard receiver. In this paper, an approach for the design of a multi-band LNA for DECT and Bluetooth is presented. The formula for a minimal noise factor of a LNA, that takes into account the finite quality factor of the inductors is derived and the full design procedure that facilitates the design of a fully integrated LNA is given. The main advantages of the presented multi-band LNA are: high level of integration, reduced chip area by using only one integrated inductor, while the other is implemented as a bond-wire, input matching at two frequencies while having low noise figure, moderate voltage gain and good linearity. In DECT mode the simulated LNA performance is: NF = 2.2 dB, gain = 17 dB, IIP3 = 0.5 dBm, with a current of 8 mA, while in Bluetooth mode the LNA achieves: NF = 2.3 dB, gain = 15 dB, IIP3 = 3 dBm, with a current of only 4 mA.

Original language	English
Title of host publication	2004 IEEE International Symposium on Circuits and Systems - Proceedings
Pages	I565-I568
Volume	1
Publication status	Published - 2004
Event	2004 IEEE International Symposium on Circuits and Systems (ISCAS 2004) - Vancouver, Canada Duration: 23 May 2004 → 26 May 2004

Conference

Conference	2004 IEEE International Symposium on Circuits and Systems (ISCAS 2004)
Abbreviated title	ISCAS 2004
Country/Territory	Canada
City	Vancouver
Period	23/05/04 → 26/05/04

Cite this

@inproceedings{89c9105c2e594f2582e6a15298f59cdb,

title = "Fully-integrated DECT/bluetooth multi-band LNA in 0.18 μm CMOS",

abstract = "The design of a multi-band low noise amplifier (LNA) is the first obstacle towards the design of a multi-standard receiver. In this paper, an approach for the design of a multi-band LNA for DECT and Bluetooth is presented. The formula for a minimal noise factor of a LNA, that takes into account the finite quality factor of the inductors is derived and the full design procedure that facilitates the design of a fully integrated LNA is given. The main advantages of the presented multi-band LNA are: high level of integration, reduced chip area by using only one integrated inductor, while the other is implemented as a bond-wire, input matching at two frequencies while having low noise figure, moderate voltage gain and good linearity. In DECT mode the simulated LNA performance is: NF = 2.2 dB, gain = 17 dB, IIP3 = 0.5 dBm, with a current of 8 mA, while in Bluetooth mode the LNA achieves: NF = 2.3 dB, gain = 15 dB, IIP3 = 3 dBm, with a current of only 4 mA.",

author = "Vojkan Vidojkovic and \{Van Der Tang\}, Johan and Eric Hanssen and Leeuwenburgh, \{Arjan J.\} and \{Van Roermund\}, Arthur",

year = "2004",

language = "English",

volume = "1",

pages = "I565--I568",

booktitle = "2004 IEEE International Symposium on Circuits and Systems - Proceedings",

note = "2004 IEEE International Symposium on Circuits and Systems (ISCAS 2004), ISCAS 2004 ; Conference date: 23-05-2004 Through 26-05-2004",

}

TY - GEN

T1 - Fully-integrated DECT/bluetooth multi-band LNA in 0.18 μm CMOS

AU - Vidojkovic, Vojkan

AU - Van Der Tang, Johan

AU - Hanssen, Eric

AU - Leeuwenburgh, Arjan J.

AU - Van Roermund, Arthur

PY - 2004

Y1 - 2004

N2 - The design of a multi-band low noise amplifier (LNA) is the first obstacle towards the design of a multi-standard receiver. In this paper, an approach for the design of a multi-band LNA for DECT and Bluetooth is presented. The formula for a minimal noise factor of a LNA, that takes into account the finite quality factor of the inductors is derived and the full design procedure that facilitates the design of a fully integrated LNA is given. The main advantages of the presented multi-band LNA are: high level of integration, reduced chip area by using only one integrated inductor, while the other is implemented as a bond-wire, input matching at two frequencies while having low noise figure, moderate voltage gain and good linearity. In DECT mode the simulated LNA performance is: NF = 2.2 dB, gain = 17 dB, IIP3 = 0.5 dBm, with a current of 8 mA, while in Bluetooth mode the LNA achieves: NF = 2.3 dB, gain = 15 dB, IIP3 = 3 dBm, with a current of only 4 mA.

AB - The design of a multi-band low noise amplifier (LNA) is the first obstacle towards the design of a multi-standard receiver. In this paper, an approach for the design of a multi-band LNA for DECT and Bluetooth is presented. The formula for a minimal noise factor of a LNA, that takes into account the finite quality factor of the inductors is derived and the full design procedure that facilitates the design of a fully integrated LNA is given. The main advantages of the presented multi-band LNA are: high level of integration, reduced chip area by using only one integrated inductor, while the other is implemented as a bond-wire, input matching at two frequencies while having low noise figure, moderate voltage gain and good linearity. In DECT mode the simulated LNA performance is: NF = 2.2 dB, gain = 17 dB, IIP3 = 0.5 dBm, with a current of 8 mA, while in Bluetooth mode the LNA achieves: NF = 2.3 dB, gain = 15 dB, IIP3 = 3 dBm, with a current of only 4 mA.

UR - https://www.scopus.com/pages/publications/4344569699

M3 - Conference contribution

VL - 1

SP - I565-I568

BT - 2004 IEEE International Symposium on Circuits and Systems - Proceedings

T2 - 2004 IEEE International Symposium on Circuits and Systems (ISCAS 2004)

Y2 - 23 May 2004 through 26 May 2004

ER -

Fully-integrated DECT/bluetooth multi-band LNA in 0.18 μm CMOS

Abstract

Conference

Other files and links

Fingerprint

Cite this