Fully-Integrated DECT/Bluetooth Multi-Band LNA in 0.18 µm CMOS

V. Vidojkovic, J.D. Tang, van der, Eric Hanssen, A.J. Leeuwenburgh, A.H.M. Roermund, van

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Abstract

The design of a multi-band low noise amplifier (LNA) is the first obstacle towards the design of a multi-standard receiver. In this paper, an approach for the design of a multi-band LNA for DECT and Bluetooth is presented. The formula for a minimal noise factor of a LNA, that takes into account the finite quality factor of the inductors is derived and the full design procedure that facilitates the design of a fully integrated LNA is given. The main advantages of the presented multi-band LNA are: high level of integration, reduced chip area by using only one integrated inductor, while the other is implemented as a bond-wire, input matching at two frequencies while having low noise figure, moderate voltage gain and good linearity. In DECT mode the simulated LNA performance is: NF = 2.2 dB, gain = 17 dB, IIP3 = 0.5 dBm, with a current of 8 mA, while in Bluetooth mode the LNA achieves: NF = 2.3 dB, gain = 15 dB, IIP3 = 3 dBm, with a current of only 4 mA.
Original languageEnglish
Title of host publicationIEEE International Symposium on Circuits and Systems (ISCAS 2004) 23 - 26 May 2004, Vancouver, British Columbia, Canada
Place of PublicationPiscataway, New Jersey, USA
PublisherInstitute of Electrical and Electronics Engineers
Pages565-568
Volume1
ISBN (Print)0-7803-8251-X
Publication statusPublished - 2004
Event2004 IEEE International Symposium on Circuits and Systems (ISCAS 2004) - Vancouver, Canada
Duration: 23 May 200426 May 2004

Conference

Conference2004 IEEE International Symposium on Circuits and Systems (ISCAS 2004)
Abbreviated titleISCAS 2004
CountryCanada
CityVancouver
Period23/05/0426/05/04

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