Fully balanced 60 GHz LNA with 37% bandwidth, 3.8 dB NF, 10 dB gain and constant group delay over 6 GHz bandwith

E.J.G. Janssen, R. Mahmoudi, E. Heijden, van der, P. Sakian Dezfuli, A.J.M. Graauw, de, Ralf Pijper, A.H.M. Roermund, van

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13 Citations (Scopus)
84 Downloads (Pure)

Abstract

This paper presents a two-stage fully integrated 60 GHz differential Low Noise Amplifier implemented in a TSMC bulk CMOS 65 nm technology. Implementation of a voltage-voltage feedback enables the neutralization of the Miller capacitance and the achievement of flat gain with a deviation of ± 0.25 dB over the entire 6 GHz bandwidth. It features a transducer gain (Gt) of 10 dB along with a noise figure (NF) of 3.8 dB, NFmin of 3.7 dB and a constant delay time. IIP3 is 4 dBm. It consumes 35 mW from a 1.2 V supply and only occupies 330 x 170 µm.
Original languageEnglish
Title of host publicationProceedings of 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SIRF 2010), 11-13 January 2010, New Orleans, Louisiana
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages124-127
ISBN (Print)978-1-4244-5456-3
DOIs
Publication statusPublished - 2010
Eventconference; SIRF 2010 -
Duration: 1 Jan 2010 → …

Conference

Conferenceconference; SIRF 2010
Period1/01/10 → …
OtherSIRF 2010

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    Janssen, E. J. G., Mahmoudi, R., Heijden, van der, E., Sakian Dezfuli, P., Graauw, de, A. J. M., Pijper, R., & Roermund, van, A. H. M. (2010). Fully balanced 60 GHz LNA with 37% bandwidth, 3.8 dB NF, 10 dB gain and constant group delay over 6 GHz bandwith. In Proceedings of 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SIRF 2010), 11-13 January 2010, New Orleans, Louisiana (pp. 124-127). Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/SMIC.2010.5422843