Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices

Y. Jiao; J. Pello; A.J. Millan Mejia; L. Shen; B. Smalbrugge; E.J. Geluk; M.K. Smit; J.J.G.M. Tol, van der

doi:10.1364/OL.39.001645

Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices

Y. Jiao, J. Pello, A.J. Millan Mejia, L. Shen, B. Smalbrugge, E.J. Geluk, M.K. Smit, J.J.G.M. Tol, van der

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Abstract

In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C 60 fullerene. The addition of C 60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators. The fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy with respect to the same structures fabricated with normal ZEP resist. Straight InP membrane waveguides with different lengths have been fabricated using this mixed resist. A decrease of the propagation loss from 6.6 to 3.3¿¿dB/cm has been demonstrated.

Original language	English
Pages (from-to)	1645-1648
Journal	Optics Letters
Volume	39
Issue number	6
DOIs	https://doi.org/10.1364/OL.39.001645
Publication status	Published - 2014

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title = "Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices",

abstract = "In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C 60 fullerene. The addition of C 60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators. The fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy with respect to the same structures fabricated with normal ZEP resist. Straight InP membrane waveguides with different lengths have been fabricated using this mixed resist. A decrease of the propagation loss from 6.6 to 3.3¿¿dB/cm has been demonstrated.",

author = "Y. Jiao and J. Pello and {Millan Mejia}, A.J. and L. Shen and B. Smalbrugge and E.J. Geluk and M.K. Smit and {Tol, van der}, J.J.G.M.",

year = "2014",

doi = "10.1364/OL.39.001645",

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pages = "1645--1648",

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TY - JOUR

T1 - Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices

AU - Jiao, Y.

AU - Pello, J.

AU - Millan Mejia, A.J.

AU - Shen, L.

AU - Smalbrugge, B.

AU - Geluk, E.J.

AU - Smit, M.K.

AU - Tol, van der, J.J.G.M.

PY - 2014

Y1 - 2014

N2 - In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C 60 fullerene. The addition of C 60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators. The fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy with respect to the same structures fabricated with normal ZEP resist. Straight InP membrane waveguides with different lengths have been fabricated using this mixed resist. A decrease of the propagation loss from 6.6 to 3.3¿¿dB/cm has been demonstrated.

AB - In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C 60 fullerene. The addition of C 60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators. The fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy with respect to the same structures fabricated with normal ZEP resist. Straight InP membrane waveguides with different lengths have been fabricated using this mixed resist. A decrease of the propagation loss from 6.6 to 3.3¿¿dB/cm has been demonstrated.

U2 - 10.1364/OL.39.001645

DO - 10.1364/OL.39.001645

M3 - Article

C2 - 24690859

SN - 0146-9592

VL - 39

SP - 1645

EP - 1648

JO - Optics Letters

JF - Optics Letters

IS - 6

ER -

Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices

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