From the bottom-up: toward area-selective atomic layer deposition with high selectivity

Research output: Contribution to journalArticleAcademicpeer-review

15 Citations (Scopus)
203 Downloads (Pure)

Abstract

Bottom-up nanofabrication by area-selective atomic layer deposition (ALD) is currently gaining momentum in semiconductor processing, because of the increasing need for eliminating the edge placement errors of top-down processing. Moreover, area-selective ALD offers new opportunities in many other areas such as the synthesis of catalysts with atomic-level control. This Perspective provides an overview of the current developments in the field of area-selective ALD, discusses the challenge of achieving a high selectivity, and provides a vision for how area-selective ALD processes can be improved. A general cause for the loss of selectivity during deposition is that the character of surfaces on which no deposition should take place changes when it is exposed to the ALD chemistry. A solution is to implement correction steps during ALD involving for example surface functionalization or selective etching. This leads to the development of advanced ALD cycles by combining conventional two-step ALD cycles with correction steps in multistep cycle and/or supercycle recipes.

Original languageEnglish
Pages (from-to)2-12
Number of pages11
JournalChemistry of Materials
Volume31
Issue number1
Early online date19 Dec 2018
DOIs
Publication statusPublished - 8 Jan 2019

Fingerprint

Atomic layer deposition
Level control
Processing
Nanotechnology
Etching
Momentum
Semiconductor materials
Catalysts

Cite this

@article{cd1f6f01b29d4ba8aa5a10bed65b9961,
title = "From the bottom-up: toward area-selective atomic layer deposition with high selectivity",
abstract = "Bottom-up nanofabrication by area-selective atomic layer deposition (ALD) is currently gaining momentum in semiconductor processing, because of the increasing need for eliminating the edge placement errors of top-down processing. Moreover, area-selective ALD offers new opportunities in many other areas such as the synthesis of catalysts with atomic-level control. This Perspective provides an overview of the current developments in the field of area-selective ALD, discusses the challenge of achieving a high selectivity, and provides a vision for how area-selective ALD processes can be improved. A general cause for the loss of selectivity during deposition is that the character of surfaces on which no deposition should take place changes when it is exposed to the ALD chemistry. A solution is to implement correction steps during ALD involving for example surface functionalization or selective etching. This leads to the development of advanced ALD cycles by combining conventional two-step ALD cycles with correction steps in multistep cycle and/or supercycle recipes.",
author = "Mackus, {Adriaan J.M.} and Merkx, {Marc J.M.} and Kessels, {Wilhelmus M.M.}",
year = "2019",
month = "1",
day = "8",
doi = "10.1021/acs.chemmater.8b03454",
language = "English",
volume = "31",
pages = "2--12",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "1",

}

TY - JOUR

T1 - From the bottom-up: toward area-selective atomic layer deposition with high selectivity

AU - Mackus, Adriaan J.M.

AU - Merkx, Marc J.M.

AU - Kessels, Wilhelmus M.M.

PY - 2019/1/8

Y1 - 2019/1/8

N2 - Bottom-up nanofabrication by area-selective atomic layer deposition (ALD) is currently gaining momentum in semiconductor processing, because of the increasing need for eliminating the edge placement errors of top-down processing. Moreover, area-selective ALD offers new opportunities in many other areas such as the synthesis of catalysts with atomic-level control. This Perspective provides an overview of the current developments in the field of area-selective ALD, discusses the challenge of achieving a high selectivity, and provides a vision for how area-selective ALD processes can be improved. A general cause for the loss of selectivity during deposition is that the character of surfaces on which no deposition should take place changes when it is exposed to the ALD chemistry. A solution is to implement correction steps during ALD involving for example surface functionalization or selective etching. This leads to the development of advanced ALD cycles by combining conventional two-step ALD cycles with correction steps in multistep cycle and/or supercycle recipes.

AB - Bottom-up nanofabrication by area-selective atomic layer deposition (ALD) is currently gaining momentum in semiconductor processing, because of the increasing need for eliminating the edge placement errors of top-down processing. Moreover, area-selective ALD offers new opportunities in many other areas such as the synthesis of catalysts with atomic-level control. This Perspective provides an overview of the current developments in the field of area-selective ALD, discusses the challenge of achieving a high selectivity, and provides a vision for how area-selective ALD processes can be improved. A general cause for the loss of selectivity during deposition is that the character of surfaces on which no deposition should take place changes when it is exposed to the ALD chemistry. A solution is to implement correction steps during ALD involving for example surface functionalization or selective etching. This leads to the development of advanced ALD cycles by combining conventional two-step ALD cycles with correction steps in multistep cycle and/or supercycle recipes.

UR - http://www.scopus.com/inward/record.url?scp=85059422985&partnerID=8YFLogxK

U2 - 10.1021/acs.chemmater.8b03454

DO - 10.1021/acs.chemmater.8b03454

M3 - Article

C2 - 30774194

AN - SCOPUS:85059422985

VL - 31

SP - 2

EP - 12

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 1

ER -