From InSb nanowires to nanocubes : looking for the sweet spot

S.R. Plissard; D.R. Slapak; M.A. Verheijen; M. Hocevar; W.G.G. Immink; I. Weperen, van; S. Nadj-Perge; S.M. Frolov; L.P. Kouwenhoven; E.P.A.M. Bakkers

doi:10.1021/nl203846g

From InSb nanowires to nanocubes : looking for the sweet spot

S.R. Plissard, D.R. Slapak, M.A. Verheijen, M. Hocevar, W.G.G. Immink, I. Weperen, van, S. Nadj-Perge, S.M. Frolov, L.P. Kouwenhoven, E.P.A.M. Bakkers

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Abstract

High aspect ratios are highly desired to fully exploit the one-dimensional properties of indium antimonide nanowires. Here we systematically investigate the growth mechanisms and find parameters leading to long and thin nanowires. Variation of the V/III ratio and the nanowire density are found to have the same influence on the "local" growth conditions and can control the InSb shape from thin nanowires to nanocubes. We propose that the V/III ratio controls the droplet composition and the radial growth rate and these parameters determine the nanowire shape. A sweet spot is found for nanowire interdistances around 500 nm leading to aspect ratios up to 35. High electron mobilities up to 3.5 × 104 cm2 V–1 s–1 enable the realization of complex spintronic and topological devices.

Original language	English
Pages (from-to)	1794-1798
Journal	Nano Letters
Volume	12
Issue number	4
DOIs	https://doi.org/10.1021/nl203846g
Publication status	Published - 2012

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title = "From InSb nanowires to nanocubes : looking for the sweet spot",

abstract = "High aspect ratios are highly desired to fully exploit the one-dimensional properties of indium antimonide nanowires. Here we systematically investigate the growth mechanisms and find parameters leading to long and thin nanowires. Variation of the V/III ratio and the nanowire density are found to have the same influence on the {"}local{"} growth conditions and can control the InSb shape from thin nanowires to nanocubes. We propose that the V/III ratio controls the droplet composition and the radial growth rate and these parameters determine the nanowire shape. A sweet spot is found for nanowire interdistances around 500 nm leading to aspect ratios up to 35. High electron mobilities up to 3.5 × 104 cm2 V–1 s–1 enable the realization of complex spintronic and topological devices.",

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T1 - From InSb nanowires to nanocubes : looking for the sweet spot

AU - Plissard, S.R.

AU - Slapak, D.R.

AU - Verheijen, M.A.

AU - Hocevar, M.

AU - Immink, W.G.G.

AU - Weperen, van, I.

AU - Nadj-Perge, S.

AU - Frolov, S.M.

AU - Kouwenhoven, L.P.

AU - Bakkers, E.P.A.M.

PY - 2012

Y1 - 2012

N2 - High aspect ratios are highly desired to fully exploit the one-dimensional properties of indium antimonide nanowires. Here we systematically investigate the growth mechanisms and find parameters leading to long and thin nanowires. Variation of the V/III ratio and the nanowire density are found to have the same influence on the "local" growth conditions and can control the InSb shape from thin nanowires to nanocubes. We propose that the V/III ratio controls the droplet composition and the radial growth rate and these parameters determine the nanowire shape. A sweet spot is found for nanowire interdistances around 500 nm leading to aspect ratios up to 35. High electron mobilities up to 3.5 × 104 cm2 V–1 s–1 enable the realization of complex spintronic and topological devices.

AB - High aspect ratios are highly desired to fully exploit the one-dimensional properties of indium antimonide nanowires. Here we systematically investigate the growth mechanisms and find parameters leading to long and thin nanowires. Variation of the V/III ratio and the nanowire density are found to have the same influence on the "local" growth conditions and can control the InSb shape from thin nanowires to nanocubes. We propose that the V/III ratio controls the droplet composition and the radial growth rate and these parameters determine the nanowire shape. A sweet spot is found for nanowire interdistances around 500 nm leading to aspect ratios up to 35. High electron mobilities up to 3.5 × 104 cm2 V–1 s–1 enable the realization of complex spintronic and topological devices.

U2 - 10.1021/nl203846g

DO - 10.1021/nl203846g

M3 - Article

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SN - 1530-6984

VL - 12

SP - 1794

EP - 1798

JO - Nano Letters

JF - Nano Letters

IS - 4

ER -

From InSb nanowires to nanocubes : looking for the sweet spot

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