Fractional quantum Hall effect in MOCVD-grown gallium arsenide/aluminum gallium arsenide heterostructures at pulsed high magnetic fields

R.E. Horstman; E.J. Broek, Van den; J. Wolter; A.P.J. Deursen, van; J.P. Andre

Fractional quantum Hall effect in MOCVD-grown gallium arsenide/aluminum gallium arsenide heterostructures at pulsed high magnetic fields

R.E. Horstman
, E.J. Broek, Van den
, J. Wolter
, A.P.J. Deursen, van
, J.P. Andre

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

The fractional quantum Hall effect in GaAs/(Ga,Al)As heterojunctions grown by metalorg. chem. vapor deposition was measurement in pulsed magnetic fields up to 31 T. The results suggest an equil. localized and nonlocalized electron systems.

Original language	English
Title of host publication	Proceedings of the 17th International Conference on the Physics of Semiconductors. San Francisco, CA, USA. IUPAP. Int. Center Theor. Phys. AIP. APS. American Vacuum Soc. et al. 6-10 Aug. 1984
Editors	J.D. Chadi, W.A. Harrison
Place of Publication	New York
Publisher	Springer
Pages	295-298
ISBN (Print)	0387961089, 9780387961088
Publication status	Published - 1985

Cite this

Horstman, R. E., Broek, Van den, E. J., Wolter, J., Deursen, van, A. P. J., & Andre, J. P. (1985). Fractional quantum Hall effect in MOCVD-grown gallium arsenide/aluminum gallium arsenide heterostructures at pulsed high magnetic fields. In J. D. Chadi, & W. A. Harrison (Eds.), Proceedings of the 17th International Conference on the Physics of Semiconductors. San Francisco, CA, USA. IUPAP. Int. Center Theor. Phys. AIP. APS. American Vacuum Soc. et al. 6-10 Aug. 1984 (pp. 295-298). Springer.

Horstman, R.E. ; Broek, Van den, E.J. ; Wolter, J. et al. / Fractional quantum Hall effect in MOCVD-grown gallium arsenide/aluminum gallium arsenide heterostructures at pulsed high magnetic fields. Proceedings of the 17th International Conference on the Physics of Semiconductors. San Francisco, CA, USA. IUPAP. Int. Center Theor. Phys. AIP. APS. American Vacuum Soc. et al. 6-10 Aug. 1984. editor / J.D. Chadi ; W.A. Harrison. New York : Springer, 1985. pp. 295-298

@inproceedings{ebef7c954a8445b69625ce5758c84188,

title = "Fractional quantum Hall effect in MOCVD-grown gallium arsenide/aluminum gallium arsenide heterostructures at pulsed high magnetic fields",

abstract = "The fractional quantum Hall effect in GaAs/(Ga,Al)As heterojunctions grown by metalorg. chem. vapor deposition was measurement in pulsed magnetic fields up to 31 T. The results suggest an equil. localized and nonlocalized electron systems.",

author = "R.E. Horstman and \{Broek, Van den\}, E.J. and J. Wolter and \{Deursen, van\}, A.P.J. and J.P. Andre",

year = "1985",

language = "English",

isbn = "0387961089",

pages = "295--298",

editor = "J.D. Chadi and W.A. Harrison",

booktitle = "Proceedings of the 17th International Conference on the Physics of Semiconductors. San Francisco, CA, USA. IUPAP. Int. Center Theor. Phys. AIP. APS. American Vacuum Soc. et al. 6-10 Aug. 1984",

publisher = "Springer",

address = "Germany",

}

Horstman, RE, Broek, Van den, EJ, Wolter, J, Deursen, van, APJ & Andre, JP 1985, Fractional quantum Hall effect in MOCVD-grown gallium arsenide/aluminum gallium arsenide heterostructures at pulsed high magnetic fields. in JD Chadi & WA Harrison (eds), Proceedings of the 17th International Conference on the Physics of Semiconductors. San Francisco, CA, USA. IUPAP. Int. Center Theor. Phys. AIP. APS. American Vacuum Soc. et al. 6-10 Aug. 1984. Springer, New York, pp. 295-298.

Fractional quantum Hall effect in MOCVD-grown gallium arsenide/aluminum gallium arsenide heterostructures at pulsed high magnetic fields. / Horstman, R.E.; Broek, Van den, E.J.; Wolter, J. et al.
Proceedings of the 17th International Conference on the Physics of Semiconductors. San Francisco, CA, USA. IUPAP. Int. Center Theor. Phys. AIP. APS. American Vacuum Soc. et al. 6-10 Aug. 1984. ed. / J.D. Chadi; W.A. Harrison. New York: Springer, 1985. p. 295-298.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Fractional quantum Hall effect in MOCVD-grown gallium arsenide/aluminum gallium arsenide heterostructures at pulsed high magnetic fields

AU - Horstman, R.E.

AU - Broek, Van den, E.J.

AU - Wolter, J.

AU - Deursen, van, A.P.J.

AU - Andre, J.P.

PY - 1985

Y1 - 1985

N2 - The fractional quantum Hall effect in GaAs/(Ga,Al)As heterojunctions grown by metalorg. chem. vapor deposition was measurement in pulsed magnetic fields up to 31 T. The results suggest an equil. localized and nonlocalized electron systems.

AB - The fractional quantum Hall effect in GaAs/(Ga,Al)As heterojunctions grown by metalorg. chem. vapor deposition was measurement in pulsed magnetic fields up to 31 T. The results suggest an equil. localized and nonlocalized electron systems.

M3 - Conference contribution

SN - 0387961089

SN - 9780387961088

SP - 295

EP - 298

BT - Proceedings of the 17th International Conference on the Physics of Semiconductors. San Francisco, CA, USA. IUPAP. Int. Center Theor. Phys. AIP. APS. American Vacuum Soc. et al. 6-10 Aug. 1984

A2 - Chadi, J.D.

A2 - Harrison, W.A.

PB - Springer

CY - New York

ER -

Horstman RE, Broek, Van den EJ, Wolter J, Deursen, van APJ, Andre JP. Fractional quantum Hall effect in MOCVD-grown gallium arsenide/aluminum gallium arsenide heterostructures at pulsed high magnetic fields. In Chadi JD, Harrison WA, editors, Proceedings of the 17th International Conference on the Physics of Semiconductors. San Francisco, CA, USA. IUPAP. Int. Center Theor. Phys. AIP. APS. American Vacuum Soc. et al. 6-10 Aug. 1984. New York: Springer. 1985. p. 295-298

Fractional quantum Hall effect in MOCVD-grown gallium arsenide/aluminum gallium arsenide heterostructures at pulsed high magnetic fields

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