Fractional quantum Hall effect in MOCVD-grown gallium arsenide/aluminum gallium arsenide heterostructures at pulsed high magnetic fields

R.E. Horstman, E.J. Broek, Van den, J. Wolter, A.P.J. Deursen, van, J.P. Andre

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

The fractional quantum Hall effect in GaAs/(Ga,Al)As heterojunctions grown by metalorg. chem. vapor deposition was measurement in pulsed magnetic fields up to 31 T. The results suggest an equil. localized and nonlocalized electron systems.
Original languageEnglish
Title of host publicationProceedings of the 17th International Conference on the Physics of Semiconductors. San Francisco, CA, USA. IUPAP. Int. Center Theor. Phys. AIP. APS. American Vacuum Soc. et al. 6-10 Aug. 1984
EditorsJ.D. Chadi, W.A. Harrison
Place of PublicationNew York
PublisherSpringer
Pages295-298
ISBN (Print)0387961089, 9780387961088
Publication statusPublished - 1985

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