Abstract
The fractional quantum Hall effect in GaAs/(Ga,Al)As heterojunctions grown by metalorg. chem. vapor deposition was measurement in pulsed magnetic fields up to 31 T. The results suggest an equil. localized and nonlocalized electron systems.
Original language | English |
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Title of host publication | Proceedings of the 17th International Conference on the Physics of Semiconductors. San Francisco, CA, USA. IUPAP. Int. Center Theor. Phys. AIP. APS. American Vacuum Soc. et al. 6-10 Aug. 1984 |
Editors | J.D. Chadi, W.A. Harrison |
Place of Publication | New York |
Publisher | Springer |
Pages | 295-298 |
ISBN (Print) | 0387961089, 9780387961088 |
Publication status | Published - 1985 |