Foundry photonic process extension with bandgap tuning using selective area growth

Florian Lemaitre; Catherine Fortin; Nadine Lagay; Guillaume Binet; Dzmitry Pustakhod; Jean Decobert; Huub Ambrosius; Kevin Williams

doi:10.1109/JSTQE.2019.2922069

Foundry photonic process extension with bandgap tuning using selective area growth

Florian Lemaitre
, Catherine Fortin
, Nadine Lagay
, Guillaume Binet
, Dzmitry Pustakhod
, Jean Decobert
, Huub Ambrosius
, Kevin Williams

Photonic Integration

Research output: Contribution to journal › Article › Academic › peer-review

11 Citations (Scopus)

346 Downloads (Pure)

Abstract

The extension of a photonic integrated circuit foundry process flow is proposed by integrating selective area growth (SAG) to enable bandgap tuning for each individual active building block. The process adaptations and the impact on performance are reviewed in terms of morphology requirements and topology reduction. This platform extension enables bandgap tuning for a set of active devices to cover the wavelength range from 1453 to 1651 nm. Integration is demonstrated in combination with active-passive butt-joint technology to create the most comprehensive range of generic building blocks. Performance and limitations of the range of achievable band-edges within the same monolithic wafer are studied for amplifiers and extended cavity lasers.

Original language	English
Article number	8734761
Number of pages	8
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	25
Issue number	5
DOIs	https://doi.org/10.1109/JSTQE.2019.2922069
Publication status	Published - 11 Jun 2019

Funding

Manuscript received December 12, 2018; revised June 3, 2019; accepted June 3, 2019. Date of publication June 11, 2019; date of current version July 2, 2019. This work was supported in part by the European Commission under the Marie Curie GeTPICs Project under FP7-PEOPLE under Grant Agreement 317316 and in part by the Dutch Ministry of Education, Culture and Science under the NWO Research School for Integrated Nanophotonics. (Corresponding author: Florian Lemaitre.) F. Lemaitre, D. Pustakhod, H. Ambrosius, and K. Williams are with the Institute for Photonic Integration, Eindhoven University of Technology, Eindhoven 5600 MB, The Netherlands (e-mail: [email protected]; [email protected]; [email protected]; [email protected]).

Keywords

butt-joint integration
Generic photonic integration
multi-project wafer run
photonic integrated circuits
selective area growth

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10.1109/JSTQE.2019.2922069

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Cite this

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abstract = "The extension of a photonic integrated circuit foundry process flow is proposed by integrating selective area growth (SAG) to enable bandgap tuning for each individual active building block. The process adaptations and the impact on performance are reviewed in terms of morphology requirements and topology reduction. This platform extension enables bandgap tuning for a set of active devices to cover the wavelength range from 1453 to 1651 nm. Integration is demonstrated in combination with active-passive butt-joint technology to create the most comprehensive range of generic building blocks. Performance and limitations of the range of achievable band-edges within the same monolithic wafer are studied for amplifiers and extended cavity lasers.",

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AU - Decobert, Jean

AU - Ambrosius, Huub

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Foundry photonic process extension with bandgap tuning using selective area growth

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