Foundry photonic process extension with bandgap tuning using selective area growth

Florian Lemaitre; Catherine Fortin; Nadine Lagay; Guillaume Binet; Dzmitry Pustakhod; Jean Decobert; Huub Ambrosius; Kevin Williams

doi:10.1109/JSTQE.2019.2922069

Foundry photonic process extension with bandgap tuning using selective area growth

Florian Lemaitre, Catherine Fortin, Nadine Lagay, Guillaume Binet, Dzmitry Pustakhod, Jean Decobert, Huub Ambrosius, Kevin Williams

Photonic Integration

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Abstract

The extension of a photonic integrated circuit foundry process flow is proposed by integrating selective area growth (SAG) to enable bandgap tuning for each individual active building block. The process adaptations and the impact on performance are reviewed in terms of morphology requirements and topology reduction. This platform extension enables bandgap tuning for a set of active devices to cover the wavelength range from 1453 to 1651 nm. Integration is demonstrated in combination with active-passive butt-joint technology to create the most comprehensive range of generic building blocks. Performance and limitations of the range of achievable band-edges within the same monolithic wafer are studied for amplifiers and extended cavity lasers.

Original language	English
Article number	8734761
Number of pages	8
Journal	IEEE Journal of Selected Topics in Quantum Electronics
Volume	25
Issue number	5
DOIs	https://doi.org/10.1109/JSTQE.2019.2922069
Publication status	Published - 11 Jun 2019

Keywords

butt-joint integration
Generic photonic integration
multi-project wafer run
photonic integrated circuits
selective area growth

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10.1109/JSTQE.2019.2922069

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abstract = "The extension of a photonic integrated circuit foundry process flow is proposed by integrating selective area growth (SAG) to enable bandgap tuning for each individual active building block. The process adaptations and the impact on performance are reviewed in terms of morphology requirements and topology reduction. This platform extension enables bandgap tuning for a set of active devices to cover the wavelength range from 1453 to 1651 nm. Integration is demonstrated in combination with active-passive butt-joint technology to create the most comprehensive range of generic building blocks. Performance and limitations of the range of achievable band-edges within the same monolithic wafer are studied for amplifiers and extended cavity lasers.",

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AU - Lemaitre, Florian

AU - Fortin, Catherine

AU - Lagay, Nadine

AU - Binet, Guillaume

AU - Pustakhod, Dzmitry

AU - Decobert, Jean

AU - Ambrosius, Huub

AU - Williams, Kevin

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AB - The extension of a photonic integrated circuit foundry process flow is proposed by integrating selective area growth (SAG) to enable bandgap tuning for each individual active building block. The process adaptations and the impact on performance are reviewed in terms of morphology requirements and topology reduction. This platform extension enables bandgap tuning for a set of active devices to cover the wavelength range from 1453 to 1651 nm. Integration is demonstrated in combination with active-passive butt-joint technology to create the most comprehensive range of generic building blocks. Performance and limitations of the range of achievable band-edges within the same monolithic wafer are studied for amplifiers and extended cavity lasers.

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Foundry photonic process extension with bandgap tuning using selective area growth

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