Abstract
The extension of a photonic integrated circuit foundry process flow is proposed by integrating selective area growth (SAG) to enable bandgap tuning for each individual active building block. The process adaptations and the impact on performance are reviewed in terms of morphology requirements and topology reduction. This platform extension enables bandgap tuning for a set of active devices to cover the wavelength range from 1453 to 1651 nm. Integration is demonstrated in combination with active-passive butt-joint technology to create the most comprehensive range of generic building blocks. Performance and limitations of the range of achievable band-edges within the same monolithic wafer are studied for amplifiers and extended cavity lasers.
| Original language | English |
|---|---|
| Article number | 8734761 |
| Number of pages | 8 |
| Journal | IEEE Journal of Selected Topics in Quantum Electronics |
| Volume | 25 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 11 Jun 2019 |
Funding
Manuscript received December 12, 2018; revised June 3, 2019; accepted June 3, 2019. Date of publication June 11, 2019; date of current version July 2, 2019. This work was supported in part by the European Commission under the Marie Curie GeTPICs Project under FP7-PEOPLE under Grant Agreement 317316 and in part by the Dutch Ministry of Education, Culture and Science under the NWO Research School for Integrated Nanophotonics. (Corresponding author: Florian Lemaitre.) F. Lemaitre, D. Pustakhod, H. Ambrosius, and K. Williams are with the Institute for Photonic Integration, Eindhoven University of Technology, Eindhoven 5600 MB, The Netherlands (e-mail: [email protected]; [email protected]; [email protected]; [email protected]).
Keywords
- butt-joint integration
- Generic photonic integration
- multi-project wafer run
- photonic integrated circuits
- selective area growth