Foundry photonic process extension with bandgap tuning using selective area growth

Florian Lemaitre, Catherine Fortin, Nadine Lagay, Guillaume Binet, Dzmitry Pustakhod, Jean Decobert, Huub Ambrosius, Kevin Williams

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

The extension of a photonic integrated circuit foundry process flow is proposed by integrating selective area growth (SAG) to enable bandgap tuning for each individual active building block. The process adaptations and the impact on performance are reviewed in terms of morphology requirements and topology reduction. This platform extension enables bandgap tuning for a set of active devices to cover the wavelength range from 1453 to 1651 nm. Integration is demonstrated in combination with active-passive butt-joint technology to create the most comprehensive range of generic building blocks. Performance and limitations of the range of achievable band-edges within the same monolithic wafer are studied for amplifiers and extended cavity lasers.
LanguageEnglish
Article number8734761
Number of pages8
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume25
Issue number5
DOIs
StatePublished - 11 Jun 2019

Fingerprint

foundries
Foundries
Photonics
Energy gap
Tuning
tuning
photonics
butt joints
Laser resonators
laser cavities
integrated circuits
Integrated circuits
topology
platforms
amplifiers
Topology
wafers
Wavelength
requirements
wavelengths

Keywords

  • butt-joint integration
  • Generic photonic integration
  • multi-project wafer run
  • photonic integrated circuits
  • selective area growth

Cite this

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title = "Foundry photonic process extension with bandgap tuning using selective area growth",
abstract = "The extension of a photonic integrated circuit foundry process flow is proposed by integrating selective area growth (SAG) to enable bandgap tuning for each individual active building block. The process adaptations and the impact on performance are reviewed in terms of morphology requirements and topology reduction. This platform extension enables bandgap tuning for a set of active devices to cover the wavelength range from 1453 to 1651 nm. Integration is demonstrated in combination with active-passive butt-joint technology to create the most comprehensive range of generic building blocks. Performance and limitations of the range of achievable band-edges within the same monolithic wafer are studied for amplifiers and extended cavity lasers.",
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Foundry photonic process extension with bandgap tuning using selective area growth. / Lemaitre, Florian; Fortin, Catherine; Lagay, Nadine; Binet, Guillaume; Pustakhod, Dzmitry; Decobert, Jean; Ambrosius, Huub; Williams, Kevin.

In: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 25, No. 5, 8734761, 11.06.2019.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Lemaitre,Florian

AU - Fortin,Catherine

AU - Lagay,Nadine

AU - Binet,Guillaume

AU - Pustakhod,Dzmitry

AU - Decobert,Jean

AU - Ambrosius,Huub

AU - Williams,Kevin

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