Abstract
| Original language | English |
|---|---|
| Article number | 8734761 |
| Number of pages | 8 |
| Journal | IEEE Journal of Selected Topics in Quantum Electronics |
| Volume | 25 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 11 Jun 2019 |
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Keywords
- butt-joint integration
- Generic photonic integration
- multi-project wafer run
- photonic integrated circuits
- selective area growth
Cite this
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Foundry photonic process extension with bandgap tuning using selective area growth. / Lemaitre, Florian; Fortin, Catherine; Lagay, Nadine; Binet, Guillaume; Pustakhod, Dzmitry; Decobert, Jean; Ambrosius, Huub; Williams, Kevin.
In: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 25, No. 5, 8734761, 11.06.2019.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Foundry photonic process extension with bandgap tuning using selective area growth
AU - Lemaitre, Florian
AU - Fortin, Catherine
AU - Lagay, Nadine
AU - Binet, Guillaume
AU - Pustakhod, Dzmitry
AU - Decobert, Jean
AU - Ambrosius, Huub
AU - Williams, Kevin
PY - 2019/6/11
Y1 - 2019/6/11
N2 - The extension of a photonic integrated circuit foundry process flow is proposed by integrating selective area growth (SAG) to enable bandgap tuning for each individual active building block. The process adaptations and the impact on performance are reviewed in terms of morphology requirements and topology reduction. This platform extension enables bandgap tuning for a set of active devices to cover the wavelength range from 1453 to 1651 nm. Integration is demonstrated in combination with active-passive butt-joint technology to create the most comprehensive range of generic building blocks. Performance and limitations of the range of achievable band-edges within the same monolithic wafer are studied for amplifiers and extended cavity lasers.
AB - The extension of a photonic integrated circuit foundry process flow is proposed by integrating selective area growth (SAG) to enable bandgap tuning for each individual active building block. The process adaptations and the impact on performance are reviewed in terms of morphology requirements and topology reduction. This platform extension enables bandgap tuning for a set of active devices to cover the wavelength range from 1453 to 1651 nm. Integration is demonstrated in combination with active-passive butt-joint technology to create the most comprehensive range of generic building blocks. Performance and limitations of the range of achievable band-edges within the same monolithic wafer are studied for amplifiers and extended cavity lasers.
KW - butt-joint integration
KW - Generic photonic integration
KW - multi-project wafer run
KW - photonic integrated circuits
KW - selective area growth
UR - http://www.scopus.com/inward/record.url?scp=85068591678&partnerID=8YFLogxK
U2 - 10.1109/JSTQE.2019.2922069
DO - 10.1109/JSTQE.2019.2922069
M3 - Article
AN - SCOPUS:85068591678
VL - 25
JO - IEEE Journal of Selected Topics in Quantum Electronics
JF - IEEE Journal of Selected Topics in Quantum Electronics
SN - 1077-260X
IS - 5
M1 - 8734761
ER -