Formation of two-dimensional InAs quantum dot arrays by self-organized anisotropic strain engineering on InP (3 1 1)B substrates

N. Sritirawisarn, F.W.M. Otten, van, P.E.D. Soto Rodriguez, J.L.E. Wera, R. Nötzel

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)

Abstract

The authors report the formation of two-dimensional InAs quantum dot (QD) arrays by self-organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates on InP (3 1 1)B substrates by chemical-beam epitaxy (CBE). The SL template and InAs QD growth conditions are studied in detail for optimized QD ordering. Excellent photoluminescence emission up to room temperature is achieved from buried QD arrays. The emission wavelength is tuned from above 1.9 µm to the 1.55 µm telecom wavelength region through the insertion of ultrathin GaAs interlayers beneath the QD arrays.
Original languageEnglish
Pages (from-to)164-168
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number2
DOIs
Publication statusPublished - 2010

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