Formation of two-dimensional InAs quantum dot arrays by self-organized anisotropic strain engineering on InP (3 1 1)B substrates

N. Sritirawisarn; F.W.M. Otten, van; P.E.D. Soto Rodriguez; J.L.E. Wera; R. Nötzel

doi:10.1016/j.jcrysgro.2009.10.017

Formation of two-dimensional InAs quantum dot arrays by self-organized anisotropic strain engineering on InP (3 1 1)B substrates

N. Sritirawisarn, F.W.M. Otten, van, P.E.D. Soto Rodriguez, J.L.E. Wera, R. Nötzel

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

7 Citations (Scopus)

Abstract

The authors report the formation of two-dimensional InAs quantum dot (QD) arrays by self-organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates on InP (3 1 1)B substrates by chemical-beam epitaxy (CBE). The SL template and InAs QD growth conditions are studied in detail for optimized QD ordering. Excellent photoluminescence emission up to room temperature is achieved from buried QD arrays. The emission wavelength is tuned from above 1.9 µm to the 1.55 µm telecom wavelength region through the insertion of ultrathin GaAs interlayers beneath the QD arrays.

Original language	English
Pages (from-to)	164-168
Number of pages	5
Journal	Journal of Crystal Growth
Volume	312
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.10.017
Publication status	Published - 2010

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@article{40b94f2b5de34c99b42c2bdecaf19a4e,

title = "Formation of two-dimensional InAs quantum dot arrays by self-organized anisotropic strain engineering on InP (3 1 1)B substrates",

abstract = "The authors report the formation of two-dimensional InAs quantum dot (QD) arrays by self-organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates on InP (3 1 1)B substrates by chemical-beam epitaxy (CBE). The SL template and InAs QD growth conditions are studied in detail for optimized QD ordering. Excellent photoluminescence emission up to room temperature is achieved from buried QD arrays. The emission wavelength is tuned from above 1.9 µm to the 1.55 µm telecom wavelength region through the insertion of ultrathin GaAs interlayers beneath the QD arrays.",

author = "N. Sritirawisarn and {Otten, van}, F.W.M. and {Soto Rodriguez}, P.E.D. and J.L.E. Wera and R. N{\"o}tzel",

year = "2010",

doi = "10.1016/j.jcrysgro.2009.10.017",

language = "English",

volume = "312",

pages = "164--168",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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T1 - Formation of two-dimensional InAs quantum dot arrays by self-organized anisotropic strain engineering on InP (3 1 1)B substrates

AU - Sritirawisarn, N.

AU - Otten, van, F.W.M.

AU - Soto Rodriguez, P.E.D.

AU - Wera, J.L.E.

AU - Nötzel, R.

PY - 2010

Y1 - 2010

N2 - The authors report the formation of two-dimensional InAs quantum dot (QD) arrays by self-organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates on InP (3 1 1)B substrates by chemical-beam epitaxy (CBE). The SL template and InAs QD growth conditions are studied in detail for optimized QD ordering. Excellent photoluminescence emission up to room temperature is achieved from buried QD arrays. The emission wavelength is tuned from above 1.9 µm to the 1.55 µm telecom wavelength region through the insertion of ultrathin GaAs interlayers beneath the QD arrays.

AB - The authors report the formation of two-dimensional InAs quantum dot (QD) arrays by self-organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates on InP (3 1 1)B substrates by chemical-beam epitaxy (CBE). The SL template and InAs QD growth conditions are studied in detail for optimized QD ordering. Excellent photoluminescence emission up to room temperature is achieved from buried QD arrays. The emission wavelength is tuned from above 1.9 µm to the 1.55 µm telecom wavelength region through the insertion of ultrathin GaAs interlayers beneath the QD arrays.

U2 - 10.1016/j.jcrysgro.2009.10.017

DO - 10.1016/j.jcrysgro.2009.10.017

M3 - Article

VL - 312

SP - 164

EP - 168

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 2

ER -