Formation of columnar (In,Ga)As quantum dots on GaAs(100)

J. He; R. Nötzel; P. Offermans; P.M. Koenraad; Q. Gong; G.J. Hamhuis; T.J. Eijkemans; J.H. Wolter

doi:10.1063/1.1801172

Formation of columnar (In,Ga)As quantum dots on GaAs(100)

J. He, R. Nötzel, P. Offermans, P.M. Koenraad, Q. Gong, G.J. Hamhuis, T.J. Eijkemans, J.H. Wolter

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Abstract

Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced.

Original language	English
Pages (from-to)	2771-2773
Journal	Applied Physics Letters
Volume	85
Issue number	14
DOIs	https://doi.org/10.1063/1.1801172
Publication status	Published - 2004

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title = "Formation of columnar (In,Ga)As quantum dots on GaAs(100)",

abstract = "Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced.",

author = "J. He and R. N{\"o}tzel and P. Offermans and P.M. Koenraad and Q. Gong and G.J. Hamhuis and T.J. Eijkemans and J.H. Wolter",

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pages = "2771--2773",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Formation of columnar (In,Ga)As quantum dots on GaAs(100)

AU - He, J.

AU - Nötzel, R.

AU - Offermans, P.

AU - Koenraad, P.M.

AU - Gong, Q.

AU - Hamhuis, G.J.

AU - Eijkemans, T.J.

AU - Wolter, J.H.

PY - 2004

Y1 - 2004

N2 - Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced.

AB - Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced.

U2 - 10.1063/1.1801172

DO - 10.1063/1.1801172

M3 - Article

SN - 0003-6951

VL - 85

SP - 2771

EP - 2773

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Formation of columnar (In,Ga)As quantum dots on GaAs(100)

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