Flexible NAND-like organic ferroelectric memory array

B. Kam; T.H. Ke; A. Chasin; M. Tyagi; C. Cristoferi; K. Tempelaars; A.J.J.M. van Breemen; K. Myny; S. Schols; J. Genoe; G.H. Gelinck; P. Heremans

doi:10.1109/LED.2014.2313029

Flexible NAND-like organic ferroelectric memory array

B. Kam, T.H. Ke, A. Chasin, M. Tyagi, C. Cristoferi, K. Tempelaars, A.J.J.M. van Breemen, K. Myny, S. Schols, J. Genoe, G.H. Gelinck, P. Heremans

Research output: Contribution to journal › Article › Academic › peer-review

23 Citations (Scopus)

Abstract

We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for select or access transistors. As proof of principle, a 1 x 4 NAND-like string is fabricated and characterized. Retention up to one month and endurance up to 2500 cycles are shown. Read and write disturb measurements show that the memory array can potentially be scaled up to 8 kbits.

Original language	English
Article number	6781647
Pages (from-to)	539-541
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	5
DOIs	https://doi.org/10.1109/LED.2014.2313029
Publication status	Published - 2014
Externally published	Yes

Keywords

Ferroelectric
memory array.
NAND
nonvolatile memory
organic semiconductors

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10.1109/LED.2014.2313029

Cite this

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title = "Flexible NAND-like organic ferroelectric memory array",

abstract = "We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for select or access transistors. As proof of principle, a 1 x 4 NAND-like string is fabricated and characterized. Retention up to one month and endurance up to 2500 cycles are shown. Read and write disturb measurements show that the memory array can potentially be scaled up to 8 kbits.",

keywords = "Ferroelectric, memory array., NAND, nonvolatile memory, organic semiconductors",

author = "B. Kam and T.H. Ke and A. Chasin and M. Tyagi and C. Cristoferi and K. Tempelaars and {van Breemen}, A.J.J.M. and K. Myny and S. Schols and J. Genoe and G.H. Gelinck and P. Heremans",

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doi = "10.1109/LED.2014.2313029",

language = "English",

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T1 - Flexible NAND-like organic ferroelectric memory array

AU - Kam, B.

AU - Ke, T.H.

AU - Chasin, A.

AU - Tyagi, M.

AU - Cristoferi, C.

AU - Tempelaars, K.

AU - van Breemen, A.J.J.M.

AU - Myny, K.

AU - Schols, S.

AU - Genoe, J.

AU - Gelinck, G.H.

AU - Heremans, P.

PY - 2014

Y1 - 2014

N2 - We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for select or access transistors. As proof of principle, a 1 x 4 NAND-like string is fabricated and characterized. Retention up to one month and endurance up to 2500 cycles are shown. Read and write disturb measurements show that the memory array can potentially be scaled up to 8 kbits.

AB - We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for select or access transistors. As proof of principle, a 1 x 4 NAND-like string is fabricated and characterized. Retention up to one month and endurance up to 2500 cycles are shown. Read and write disturb measurements show that the memory array can potentially be scaled up to 8 kbits.

KW - Ferroelectric

KW - memory array.

KW - NAND

KW - nonvolatile memory

KW - organic semiconductors

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DO - 10.1109/LED.2014.2313029

M3 - Article

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EP - 541

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

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Flexible NAND-like organic ferroelectric memory array

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Keywords

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