Flexible NAND-like organic ferroelectric memory array

B. Kam, T.H. Ke, A. Chasin, M. Tyagi, C. Cristoferi, K. Tempelaars, A.J.J.M. van Breemen, K. Myny, S. Schols, J. Genoe, G.H. Gelinck, P. Heremans

Research output: Contribution to journalArticleAcademicpeer-review

21 Citations (Scopus)


We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for select or access transistors. As proof of principle, a 1 x 4 NAND-like string is fabricated and characterized. Retention up to one month and endurance up to 2500 cycles are shown. Read and write disturb measurements show that the memory array can potentially be scaled up to 8 kbits.

Original languageEnglish
Article number6781647
Pages (from-to)539-541
Number of pages3
JournalIEEE Electron Device Letters
Issue number5
Publication statusPublished - 2014
Externally publishedYes


  • Ferroelectric
  • memory array.
  • NAND
  • nonvolatile memory
  • organic semiconductors


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