Flexible metal-oxide thin film transistor circuits for RFID and health patches

P. Heremans, N. Papadopoulos, A. de Jamblinne de Meux, M. Nag, S. Steudel, M. Rockele, G.H. Gelinck, A.K. Tripathi, J. Genoe, K. Myny

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

10 Citations (Scopus)
1 Downloads (Pure)


We discuss in this paper the present state and future perspectives of thin-film oxide transistors for flexible electronics. The application case that we focus on is a flexible health patch containing an analog sensor interface as well as digital electronics to transmit the acquired data wirelessly to a base station. We examine the electronic performance of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) during mechanical bending. We discuss several ways to further boost the electronic transistor performance of n-type amorphous oxide semiconductors, by modifying the semiconductor or by improving the transistor architecture. We show analog and digital circuits constructed with several architectures, all based on n-type-only amorphous oxide technology. From circuit point of view, the discovery of a p-type amorphous semiconductor matching known n-type amorphous semiconductors would be of great importance. The present best-suited p-type is SnO, but it is poly-crystalline in nature and shows some ambipolarity due to the presence of n-type SnO2. In search of a better p-type semiconductor, preferably amorphous, we present recent insights into the band structure of potential amorphous oxide p-type semiconductors.

Original languageEnglish
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Number of pages4
ISBN (Electronic)978-1-5090-3902-9
Publication statusPublished - 31 Jan 2017
Event2016 IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: 3 Dec 20167 Dec 2016
Conference number: 62


Conference2016 IEEE International Electron Devices Meeting, IEDM 2016
Abbreviated titleIEDM 2016
Country/TerritoryUnited States
CitySan Francisco


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