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Flexible a-IGZO TFT technology: new developments & applications

  • Auke Jisk Kronemeijer
  • , Ilias Katsouras
  • , Paul Poodt
  • , Hylke Akkerman
  • , Albert van Breemen
  • , Gerwin Gelinck

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    We present recent developments on flexible a-IGZO TFT technology scaling in terms of TFT channel length and operating voltage, as well as manufacturing cost optimization with a focus on R2R processing compatibility. We present progress on the relevant technology building blocks; (i) R2R compatible TFT architecture, (ii) (multilevel) nanoimprint lithography and (iii) S-ALD deposited TFT materials. Additionally, we show a developing application that drives scaling of the technology, namely a monolithically integrated flexible AMOLED display with in-display fingerprint detection.

    Original languageEnglish
    Title of host publicationAM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices
    Subtitle of host publicationTFT Technologies and FPD Materials, Proceedings
    Place of PublicationPiscataway
    PublisherInstitute of Electrical and Electronics Engineers
    Number of pages4
    ISBN (Print)9784990875350
    DOIs
    Publication statusPublished - 2018
    Event25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018 - Kyoto, Japan
    Duration: 3 Jul 20186 Jul 2018

    Conference

    Conference25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018
    Country/TerritoryJapan
    CityKyoto
    Period3/07/186/07/18

    Funding

    This work was carried out in the frame of the Holst Centre, a joint collaboration between IMEC and TNO, and financed through the Flexlines project within the Interreg V-programme Flanders-The Netherlands, a cross-border cooperation programme with financial support from the European Regional Development Fund. We gratefully thank Fred Roozeboom and Andrea Illiberi with regards to the S-ALD work and the process engineers of Holst Centre’s GEN1 TFT Pilot Line in Eindhoven, the Netherlands, for fabrication of the transistors and TFT backplanes.

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