First demonstration of single-layer InAs/InP (100) quantum-dot laser : continuous wave, room temperature, ground state

J. Kotani; P.J. Veldhoven, van; T. Vries, de; B. Smalbrugge; E.A.J.M. Bente; M.K. Smit; R. Nötzel

doi:10.1049/el.2009.2558

First demonstration of single-layer InAs/InP (100) quantum-dot laser : continuous wave, room temperature, ground state

J. Kotani, P.J. Veldhoven, van, T. Vries, de, B. Smalbrugge, E.A.J.M. Bente, M.K. Smit, R. Nötzel

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Reported is the first InAs/InP (100) quantum-dot (QD) laser operating in continuous-wave mode at room temperature on the QD ground state transition employing a single-layer of QDs grown by metal organic vapour phase epitaxy. The necessary high QD density is achieved by growing the QDs on a thin InAs quantum well (QW). These QDs on the QW laser exhibit a high slope efficiency and a lasing wavelength of 1.74 µm, which is important for biomedical applications.

Original language	English
Pages (from-to)	1317-1318
Number of pages	2
Journal	Electronics Letters
Volume	45
Issue number	25
DOIs	https://doi.org/10.1049/el.2009.2558
Publication status	Published - 2009

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@article{fadecf686542499f9c31ec7d312c5659,

title = "First demonstration of single-layer InAs/InP (100) quantum-dot laser : continuous wave, room temperature, ground state",

abstract = "Reported is the first InAs/InP (100) quantum-dot (QD) laser operating in continuous-wave mode at room temperature on the QD ground state transition employing a single-layer of QDs grown by metal organic vapour phase epitaxy. The necessary high QD density is achieved by growing the QDs on a thin InAs quantum well (QW). These QDs on the QW laser exhibit a high slope efficiency and a lasing wavelength of 1.74 µm, which is important for biomedical applications.",

author = "J. Kotani and {Veldhoven, van}, P.J. and {Vries, de}, T. and B. Smalbrugge and E.A.J.M. Bente and M.K. Smit and R. N{\"o}tzel",

year = "2009",

doi = "10.1049/el.2009.2558",

language = "English",

volume = "45",

pages = "1317--1318",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology (IET)",

number = "25",

}

First demonstration of single-layer InAs/InP (100) quantum-dot laser : continuous wave, room temperature, ground state. / Kotani, J.; Veldhoven, van, P.J.; Vries, de, T.; Smalbrugge, B.; Bente, E.A.J.M.; Smit, M.K.; Nötzel, R.

In: Electronics Letters, Vol. 45, No. 25, 2009, p. 1317-1318.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - First demonstration of single-layer InAs/InP (100) quantum-dot laser : continuous wave, room temperature, ground state

AU - Kotani, J.

AU - Veldhoven, van, P.J.

AU - Vries, de, T.

AU - Smalbrugge, B.

AU - Bente, E.A.J.M.

AU - Smit, M.K.

AU - Nötzel, R.

PY - 2009

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AB - Reported is the first InAs/InP (100) quantum-dot (QD) laser operating in continuous-wave mode at room temperature on the QD ground state transition employing a single-layer of QDs grown by metal organic vapour phase epitaxy. The necessary high QD density is achieved by growing the QDs on a thin InAs quantum well (QW). These QDs on the QW laser exhibit a high slope efficiency and a lasing wavelength of 1.74 µm, which is important for biomedical applications.

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DO - 10.1049/el.2009.2558

M3 - Article

VL - 45

SP - 1317

EP - 1318

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

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