Abstract
Reported is the first InAs/InP (100) quantum-dot (QD) laser operating in continuous-wave mode at room temperature on the QD ground state transition employing a single-layer of QDs grown by metal organic vapour phase epitaxy. The necessary high QD density is achieved by growing the QDs on a thin InAs quantum well (QW). These QDs on the QW laser exhibit a high slope efficiency and a lasing wavelength of 1.74 µm, which is important for biomedical applications.
Original language | English |
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Pages (from-to) | 1317-1318 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 45 |
Issue number | 25 |
DOIs | |
Publication status | Published - 2009 |