First demonstration of single-layer InAs/InP (100) quantum-dot laser : continuous wave, room temperature, ground state

J. Kotani, P.J. Veldhoven, van, T. Vries, de, B. Smalbrugge, E.A.J.M. Bente, M.K. Smit, R. Nötzel

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Abstract

Reported is the first InAs/InP (100) quantum-dot (QD) laser operating in continuous-wave mode at room temperature on the QD ground state transition employing a single-layer of QDs grown by metal organic vapour phase epitaxy. The necessary high QD density is achieved by growing the QDs on a thin InAs quantum well (QW). These QDs on the QW laser exhibit a high slope efficiency and a lasing wavelength of 1.74 µm, which is important for biomedical applications.
Original languageEnglish
Pages (from-to)1317-1318
Number of pages2
JournalElectronics Letters
Volume45
Issue number25
DOIs
Publication statusPublished - 2009

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