As the manufacture of most crystalline silicon solar cells involves various high temperature processes, a good thermal stability of the surface passivation is essential. In this paper we demonstrate the thermal stability of the c-Si surface passivation by atomic layer deposited Al2O3 during a firing process as applied for screen printed solar cells. The initial outstanding surface passivation quality, provided by both Al2O3 and Al2O3/a-SiNx:H stacks, remained high after firing as indicated by effective surface recombination velocities » 14 cm/s for 2 ¿cm n-type silicon wafers.
|Title of host publication||Proceedings of the 34th IEEE Photovoltaic Specialist Conference (PVSC 2009) 7-12 June 2009 Philadelphia, USA|
|Place of Publication||Piscataway|
|Publisher||Institute of Electrical and Electronics Engineers|
|Publication status||Published - 2009|