Firing stability of atomic layer deposited Al2O3 for c-Si surface passivation

G. Dingemans, P. Engelhart, R. Seguin, B. Hoex, M.C.M. Sanden, van de, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

13 Citations (Scopus)


As the manufacture of most crystalline silicon solar cells involves various high temperature processes, a good thermal stability of the surface passivation is essential. In this paper we demonstrate the thermal stability of the c-Si surface passivation by atomic layer deposited Al2O3 during a firing process as applied for screen printed solar cells. The initial outstanding surface passivation quality, provided by both Al2O3 and Al2O3/a-SiNx:H stacks, remained high after firing as indicated by effective surface recombination velocities » 14 cm/s for 2 ¿cm n-type silicon wafers.
Original languageEnglish
Title of host publicationProceedings of the 34th IEEE Photovoltaic Specialist Conference (PVSC 2009) 7-12 June 2009 Philadelphia, USA
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
ISBN (Print)978-1-4244-2949-3
Publication statusPublished - 2009


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