Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires

Maogong Jiang; Guicui Fu; Lorenzo Ceccarelli; He Du; Martin Bendix Fogsgaard; Amir Sajjad Bahman; Yongheng Yang; Francesco Iannuzzo

doi:10.1109/ECCE.2019.8912236

Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires

Maogong Jiang, Guicui Fu, Lorenzo Ceccarelli, He Du, Martin Bendix Fogsgaard, Amir Sajjad Bahman, Yongheng Yang, Francesco Iannuzzo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

7 Citations (Scopus)

Abstract

This paper proposes a method to identify damage-sensitive electrical parameters (DESPs) for insulated gate bipolar transistor (IGBT) bond wires. Multiphysics simulations are performed to emulate the realistic electrical, thermal and mechanical behaviors of IGBT module. Temperature-dependent material properties are considered in silicon chips and aluminum bond wires. Steady-state electro-thermo-mechanical simulation results of IGBT modules in a given collector current are presented. The degradation mechanisms of wire-bonding crack propagation and complete lift-off are explored. Simulations are validated through the power cycling tests. The trend of measured forward voltage V_CE(on) is similar to the simulation result. The modeling method and results can be used to evaluate the health status of IGBT module bond wires.

Original language	English
Title of host publication	2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019
Publisher	Institute of Electrical and Electronics Engineers
Pages	839-844
Number of pages	6
ISBN (Electronic)	978-1-7281-0395-2
ISBN (Print)	978-1-7281-0396-9
DOIs	https://doi.org/10.1109/ECCE.2019.8912236
Publication status	Published - Sept 2019
Externally published	Yes
Event	11th Annual IEEE Energy Conversion Congress and Exposition (ECCE 2019) - The Baltimore Convention Center, Baltimore, United States Duration: 29 Sept 2019 → 3 Oct 2019 Conference number: 11 http://www.ieee-ecce.org/2019/

Conference

Conference	11th Annual IEEE Energy Conversion Congress and Exposition (ECCE 2019)
Abbreviated title	ECCE 2019
Country/Territory	United States
City	Baltimore
Period	29/09/19 → 3/10/19
Internet address	http://www.ieee-ecce.org/2019/

Keywords

Bond wires
Crack
Electric parameter
Finite element model
IGBT
Lift-off

Access to Document

10.1109/ECCE.2019.8912236

Cite this

Jiang, M., Fu, G., Ceccarelli, L., Du, H., Fogsgaard, M. B., Sajjad Bahman, A., Yang, Y., & Iannuzzo, F. (2019). Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires. In 2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019 (pp. 839-844). [8912236] Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ECCE.2019.8912236

@inproceedings{be9dd77ca52a478d8dcf22428c3388f8,

title = "Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires",

abstract = "This paper proposes a method to identify damage-sensitive electrical parameters (DESPs) for insulated gate bipolar transistor (IGBT) bond wires. Multiphysics simulations are performed to emulate the realistic electrical, thermal and mechanical behaviors of IGBT module. Temperature-dependent material properties are considered in silicon chips and aluminum bond wires. Steady-state electro-thermo-mechanical simulation results of IGBT modules in a given collector current are presented. The degradation mechanisms of wire-bonding crack propagation and complete lift-off are explored. Simulations are validated through the power cycling tests. The trend of measured forward voltage VCE(on) is similar to the simulation result. The modeling method and results can be used to evaluate the health status of IGBT module bond wires.",

keywords = "Bond wires, Crack, Electric parameter, Finite element model, IGBT, Lift-off",

author = "Maogong Jiang and Guicui Fu and Lorenzo Ceccarelli and He Du and Fogsgaard, {Martin Bendix} and {Sajjad Bahman}, Amir and Yongheng Yang and Francesco Iannuzzo",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 11th Annual IEEE Energy Conversion Congress and Exposition (ECCE 2019), ECCE 2019 ; Conference date: 29-09-2019 Through 03-10-2019",

year = "2019",

month = sep,

doi = "10.1109/ECCE.2019.8912236",

language = "English",

isbn = "978-1-7281-0396-9",

pages = "839--844",

booktitle = "2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019",

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Jiang, M, Fu, G, Ceccarelli, L, Du, H, Fogsgaard, MB, Sajjad Bahman, A, Yang, Y & Iannuzzo, F 2019, Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires. in 2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019., 8912236, Institute of Electrical and Electronics Engineers, pp. 839-844, 11th Annual IEEE Energy Conversion Congress and Exposition (ECCE 2019), Baltimore, United States, 29/09/19. https://doi.org/10.1109/ECCE.2019.8912236

Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires. / Jiang, Maogong; Fu, Guicui; Ceccarelli, Lorenzo et al.

2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019. Institute of Electrical and Electronics Engineers, 2019. p. 839-844 8912236.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires

AU - Jiang, Maogong

AU - Fu, Guicui

AU - Ceccarelli, Lorenzo

AU - Du, He

AU - Fogsgaard, Martin Bendix

AU - Sajjad Bahman, Amir

AU - Yang, Yongheng

AU - Iannuzzo, Francesco

N1 - Conference code: 11

PY - 2019/9

Y1 - 2019/9

N2 - This paper proposes a method to identify damage-sensitive electrical parameters (DESPs) for insulated gate bipolar transistor (IGBT) bond wires. Multiphysics simulations are performed to emulate the realistic electrical, thermal and mechanical behaviors of IGBT module. Temperature-dependent material properties are considered in silicon chips and aluminum bond wires. Steady-state electro-thermo-mechanical simulation results of IGBT modules in a given collector current are presented. The degradation mechanisms of wire-bonding crack propagation and complete lift-off are explored. Simulations are validated through the power cycling tests. The trend of measured forward voltage VCE(on) is similar to the simulation result. The modeling method and results can be used to evaluate the health status of IGBT module bond wires.

AB - This paper proposes a method to identify damage-sensitive electrical parameters (DESPs) for insulated gate bipolar transistor (IGBT) bond wires. Multiphysics simulations are performed to emulate the realistic electrical, thermal and mechanical behaviors of IGBT module. Temperature-dependent material properties are considered in silicon chips and aluminum bond wires. Steady-state electro-thermo-mechanical simulation results of IGBT modules in a given collector current are presented. The degradation mechanisms of wire-bonding crack propagation and complete lift-off are explored. Simulations are validated through the power cycling tests. The trend of measured forward voltage VCE(on) is similar to the simulation result. The modeling method and results can be used to evaluate the health status of IGBT module bond wires.

KW - Bond wires

KW - Crack

KW - Electric parameter

KW - Finite element model

KW - IGBT

KW - Lift-off

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EP - 844

BT - 2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019

PB - Institute of Electrical and Electronics Engineers

T2 - 11th Annual IEEE Energy Conversion Congress and Exposition (ECCE 2019)

Y2 - 29 September 2019 through 3 October 2019

ER -

Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires

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Keywords

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