Field-free magnetization reversal by spin-Hall effect and exchange bias

A. van den Brink, G. Vermijs, A. Solignac, J. Koo, J.T. Kohlhepp, H.J.M. Swagten, B. Koopmans

Research output: Contribution to journalArticleAcademicpeer-review

95 Citations (Scopus)

Abstract

As the first magnetic random access memories are finding their way onto the market, an important issue remains to be solved: the current density required to write magnetic bits becomes prohibitively high as bit dimensions are reduced. Recently, spin–orbit torques and the spin-Hall effect in particular have attracted significant interest, as they enable magnetization reversal without high current densities running through the tunnel barrier. For perpendicularly magnetized layers, however, the technological implementation of the spin-Hall effect is hampered by the necessity of an in-plane magnetic field for deterministic switching. Here we interface a thin ferromagnetic layer with an anti-ferromagnetic material. An in-plane exchange bias is created and shown to enable field-free S HE-driven magnetization reversal of a perpendicularly magnetized Pt/Co/IrMn structure. Aside from the potential technological implications, our experiment provides additional insight into the local spin structure at the ferromagnetic/anti-ferromagnetic interface
LanguageEnglish
Article number10854
Pages1-6
JournalNature Communications
Volume7
DOIs
StatePublished - Mar 2016

Cite this

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title = "Field-free magnetization reversal by spin-Hall effect and exchange bias",
abstract = "As the first magnetic random access memories are finding their way onto the market, an important issue remains to be solved: the current density required to write magnetic bits becomes prohibitively high as bit dimensions are reduced. Recently, spin–orbit torques and the spin-Hall effect in particular have attracted significant interest, as they enable magnetization reversal without high current densities running through the tunnel barrier. For perpendicularly magnetized layers, however, the technological implementation of the spin-Hall effect is hampered by the necessity of an in-plane magnetic field for deterministic switching. Here we interface a thin ferromagnetic layer with an anti-ferromagnetic material. An in-plane exchange bias is created and shown to enable field-free S HE-driven magnetization reversal of a perpendicularly magnetized Pt/Co/IrMn structure. Aside from the potential technological implications, our experiment provides additional insight into the local spin structure at the ferromagnetic/anti-ferromagnetic interface",
author = "{van den Brink}, A. and G. Vermijs and A. Solignac and J. Koo and J.T. Kohlhepp and H.J.M. Swagten and B. Koopmans",
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doi = "10.1038/ncomms10854",
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journal = "Nature Communications",
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Field-free magnetization reversal by spin-Hall effect and exchange bias. / van den Brink, A.; Vermijs, G.; Solignac, A.; Koo, J.; Kohlhepp, J.T.; Swagten, H.J.M.; Koopmans, B.

In: Nature Communications, Vol. 7, 10854, 03.2016, p. 1-6.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Field-free magnetization reversal by spin-Hall effect and exchange bias

AU - van den Brink,A.

AU - Vermijs,G.

AU - Solignac,A.

AU - Koo,J.

AU - Kohlhepp,J.T.

AU - Swagten,H.J.M.

AU - Koopmans,B.

PY - 2016/3

Y1 - 2016/3

N2 - As the first magnetic random access memories are finding their way onto the market, an important issue remains to be solved: the current density required to write magnetic bits becomes prohibitively high as bit dimensions are reduced. Recently, spin–orbit torques and the spin-Hall effect in particular have attracted significant interest, as they enable magnetization reversal without high current densities running through the tunnel barrier. For perpendicularly magnetized layers, however, the technological implementation of the spin-Hall effect is hampered by the necessity of an in-plane magnetic field for deterministic switching. Here we interface a thin ferromagnetic layer with an anti-ferromagnetic material. An in-plane exchange bias is created and shown to enable field-free S HE-driven magnetization reversal of a perpendicularly magnetized Pt/Co/IrMn structure. Aside from the potential technological implications, our experiment provides additional insight into the local spin structure at the ferromagnetic/anti-ferromagnetic interface

AB - As the first magnetic random access memories are finding their way onto the market, an important issue remains to be solved: the current density required to write magnetic bits becomes prohibitively high as bit dimensions are reduced. Recently, spin–orbit torques and the spin-Hall effect in particular have attracted significant interest, as they enable magnetization reversal without high current densities running through the tunnel barrier. For perpendicularly magnetized layers, however, the technological implementation of the spin-Hall effect is hampered by the necessity of an in-plane magnetic field for deterministic switching. Here we interface a thin ferromagnetic layer with an anti-ferromagnetic material. An in-plane exchange bias is created and shown to enable field-free S HE-driven magnetization reversal of a perpendicularly magnetized Pt/Co/IrMn structure. Aside from the potential technological implications, our experiment provides additional insight into the local spin structure at the ferromagnetic/anti-ferromagnetic interface

U2 - 10.1038/ncomms10854

DO - 10.1038/ncomms10854

M3 - Article

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SP - 1

EP - 6

JO - Nature Communications

T2 - Nature Communications

JF - Nature Communications

SN - 2041-1723

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van den Brink A, Vermijs G, Solignac A, Koo J, Kohlhepp JT, Swagten HJM et al. Field-free magnetization reversal by spin-Hall effect and exchange bias. Nature Communications. 2016 Mar;7:1-6. 10854. Available from, DOI: 10.1038/ncomms10854