Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

Gerwin Gelinck; A.J.J. van Breemen; Brian   Cobb

doi:10.1063/1.4913920

Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

Gerwin Gelinck, A.J.J. van Breemen, Brian Cobb

Molecular Materials and Nanosystems

Research output: Contribution to journal › Article › Academic › peer-review

6 Citations (Scopus)

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Abstract

Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors. cop. 2015 AIP Publishing LLC.

Original language	English
Article number	093503
Pages (from-to)	1-4
Number of pages	4
Journal	Applied Physics Letters
Volume	106
DOIs	https://doi.org/10.1063/1.4913920
Publication status	Published - 2015

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title = "Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor",

abstract = "Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors. cop. 2015 AIP Publishing LLC.",

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AU - van Breemen, A.J.J.

AU - Cobb, Brian

PY - 2015

Y1 - 2015

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AB - Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors. cop. 2015 AIP Publishing LLC.

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Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

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