Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

Gerwin Gelinck, A.J.J. van Breemen, Brian Cobb

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors. cop. 2015 AIP Publishing LLC.
Original languageEnglish
Article number093503
Pages (from-to)1-4
Number of pages4
JournalApplied Physics Letters
Volume106
DOIs
Publication statusPublished - 2015

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