Fast plasma deposition of carbon and silicon layers

J.J. Beulens, A.J.M. Buuron, L.A. Bisschops, T.H.J. Bisschops, A.B.M. Husken, G.M.W. Kroesen, G.J. Meeusen, C.J. Timmermans, A.T.M. Wilbers, D.C. Schram

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By separating plasma production and plasma deposition and by taking advantage of the high specific ionizing power of thermal plasmas, very high deposition rates on large areas of amorphous C-H and Si-H are obtained. The layers have been analyzed by several methods, such as ellipsometry (band gap, absorption in the visible C-H, Si-H bonding types in the infrared), nuclear techniques (hydrogen depth profile), ESCA, and diffraction. The plasma is produced at high pressure (0.1-1 bar) in a cascaded arc in a carrier gas (argon). Downstream the feed gases (CH/sub 4/ and SiH/sub 4/) and additional gases (H/sub 2/) are admixed to the mainstream. Nearly complete dissociation and charge transfer from argon to Si and C takes place whereas the plasma is accelerated to sonic velocities at the high temperature (1 eV)
Original languageEnglish
Pages (from-to)361-367
JournalJournal de Physique. Colloque
Issue numberC5
Publication statusPublished - 1990


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