Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma

W.M.M. Kessels; M.C.M. Sanden, van de; R.J. Severens; D.C. Schram

Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma

W.M.M. Kessels, M.C.M. Sanden, van de, R.J. Severens, D.C. Schram

Plasma & Materials Processing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Original language	English
Title of host publication	Progress in Plasma Processing of Materials 1999, Proceedings of the 5th International Thermal Plasma Processesing Conference, St. Petersburg, Russia,
Editors	P. Fauchais, J. Amouroux
Place of Publication	New York
Publisher	Begell House Inc.
Pages	869-875
ISBN (Print)	1-56700-126-2
Publication status	Published - 1999

Cite this

Kessels, W. M. M., Sanden, van de, M. C. M., Severens, R. J., & Schram, D. C. (1999). Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma. In P. Fauchais, & J. Amouroux (Eds.), Progress in Plasma Processing of Materials 1999, Proceedings of the 5th International Thermal Plasma Processesing Conference, St. Petersburg, Russia, (pp. 869-875). Begell House Inc..

Kessels, W.M.M. ; Sanden, van de, M.C.M. ; Severens, R.J. ; Schram, D.C. / Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma. Progress in Plasma Processing of Materials 1999, Proceedings of the 5th International Thermal Plasma Processesing Conference, St. Petersburg, Russia,. editor / P. Fauchais ; J. Amouroux. New York : Begell House Inc., 1999. pp. 869-875

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title = "Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma",

author = "W.M.M. Kessels and {Sanden, van de}, M.C.M. and R.J. Severens and D.C. Schram",

year = "1999",

language = "English",

isbn = "1-56700-126-2",

pages = "869--875",

editor = "P. Fauchais and J. Amouroux",

booktitle = "Progress in Plasma Processing of Materials 1999, Proceedings of the 5th International Thermal Plasma Processesing Conference, St. Petersburg, Russia,",

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Kessels, WMM , Sanden, van de, MCM, Severens, RJ & Schram, DC 1999, Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma. in P Fauchais & J Amouroux (eds), Progress in Plasma Processing of Materials 1999, Proceedings of the 5th International Thermal Plasma Processesing Conference, St. Petersburg, Russia,. Begell House Inc., New York, pp. 869-875.

Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma. / Kessels, W.M.M.; Sanden, van de, M.C.M.; Severens, R.J.; Schram, D.C.

Progress in Plasma Processing of Materials 1999, Proceedings of the 5th International Thermal Plasma Processesing Conference, St. Petersburg, Russia,. ed. / P. Fauchais; J. Amouroux. New York : Begell House Inc., 1999. p. 869-875.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma

AU - Kessels, W.M.M.

AU - Sanden, van de, M.C.M.

AU - Severens, R.J.

AU - Schram, D.C.

PY - 1999

Y1 - 1999

M3 - Conference contribution

SN - 1-56700-126-2

SP - 869

EP - 875

BT - Progress in Plasma Processing of Materials 1999, Proceedings of the 5th International Thermal Plasma Processesing Conference, St. Petersburg, Russia,

A2 - Fauchais, P.

A2 - Amouroux, J.

PB - Begell House Inc.

CY - New York

ER -

Kessels WMM , Sanden, van de MCM, Severens RJ, Schram DC. Fast deposition of device quality hydrogenated amorphous silicon by an expanding thermal plasma. In Fauchais P, Amouroux J, editors, Progress in Plasma Processing of Materials 1999, Proceedings of the 5th International Thermal Plasma Processesing Conference, St. Petersburg, Russia,. New York: Begell House Inc. 1999. p. 869-875