Fast ambipolar integrated circuits with poly(diketopyrrolopyrrole-terthiophene)

W.S.C. Roelofs; S.G.J. Mathijssen; J.C. Bijleveld; D. Raiteri; T.C.T. Geuns; M. Kemerink; E. Cantatore; R.A.J. Janssen; D.M. Leeuw, de

doi:10.1063/1.3589986

Fast ambipolar integrated circuits with poly(diketopyrrolopyrrole-terthiophene)

W.S.C. Roelofs, S.G.J. Mathijssen, J.C. Bijleveld, D. Raiteri, T.C.T. Geuns, M. Kemerink, E. Cantatore, R.A.J. Janssen, D.M. Leeuw, de

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Abstract

Ambipolar integrated circuits were prepared with poly(diketopyrrolopyrrole-terthiophene) as the semiconductor. The field-effect mobility of around 0.02 cm2/V¿s for both electrons and holes allowed for fabrication of functional integrated complementary metal-oxide semiconductor (CMOS)-like inverters and ring oscillators. The oscillation frequency was found to have a near quadratic dependence on the supply bias. The maximum oscillation frequency was determined to be 42 kHz, which makes this ring oscillator the fastest CMOS-like organic circuit reported to date.

Original language	English
Article number	203301
Pages (from-to)	203301-1/3
Number of pages	3
Journal	Applied Physics Letters
Volume	98
Issue number	20
DOIs	https://doi.org/10.1063/1.3589986
Publication status	Published - 2011

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@article{016527c8334e44b8a091bff1972c0b29,

title = "Fast ambipolar integrated circuits with poly(diketopyrrolopyrrole-terthiophene)",

abstract = "Ambipolar integrated circuits were prepared with poly(diketopyrrolopyrrole-terthiophene) as the semiconductor. The field-effect mobility of around 0.02 cm2/V¿s for both electrons and holes allowed for fabrication of functional integrated complementary metal-oxide semiconductor (CMOS)-like inverters and ring oscillators. The oscillation frequency was found to have a near quadratic dependence on the supply bias. The maximum oscillation frequency was determined to be 42 kHz, which makes this ring oscillator the fastest CMOS-like organic circuit reported to date.",

author = "W.S.C. Roelofs and S.G.J. Mathijssen and J.C. Bijleveld and D. Raiteri and T.C.T. Geuns and M. Kemerink and E. Cantatore and R.A.J. Janssen and {Leeuw, de}, D.M.",

year = "2011",

doi = "10.1063/1.3589986",

language = "English",

volume = "98",

pages = "203301--1/3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Fast ambipolar integrated circuits with poly(diketopyrrolopyrrole-terthiophene)

AU - Roelofs, W.S.C.

AU - Mathijssen, S.G.J.

AU - Bijleveld, J.C.

AU - Raiteri, D.

AU - Geuns, T.C.T.

AU - Kemerink, M.

AU - Cantatore, E.

AU - Janssen, R.A.J.

AU - Leeuw, de, D.M.

PY - 2011

Y1 - 2011

N2 - Ambipolar integrated circuits were prepared with poly(diketopyrrolopyrrole-terthiophene) as the semiconductor. The field-effect mobility of around 0.02 cm2/V¿s for both electrons and holes allowed for fabrication of functional integrated complementary metal-oxide semiconductor (CMOS)-like inverters and ring oscillators. The oscillation frequency was found to have a near quadratic dependence on the supply bias. The maximum oscillation frequency was determined to be 42 kHz, which makes this ring oscillator the fastest CMOS-like organic circuit reported to date.

AB - Ambipolar integrated circuits were prepared with poly(diketopyrrolopyrrole-terthiophene) as the semiconductor. The field-effect mobility of around 0.02 cm2/V¿s for both electrons and holes allowed for fabrication of functional integrated complementary metal-oxide semiconductor (CMOS)-like inverters and ring oscillators. The oscillation frequency was found to have a near quadratic dependence on the supply bias. The maximum oscillation frequency was determined to be 42 kHz, which makes this ring oscillator the fastest CMOS-like organic circuit reported to date.

U2 - 10.1063/1.3589986

DO - 10.1063/1.3589986

M3 - Article

SN - 0003-6951

VL - 98

SP - 203301-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 203301

ER -

Fast ambipolar integrated circuits with poly(diketopyrrolopyrrole-terthiophene)

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