Faraday-configured mode-locked p-Ge laser and p-Ge far-infrared amplifier

R.E. Peale, A.V. Muravjov, S.H. Withers, R.C. Strijbos, S.G. Pavlov, V.N. Shastin

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

A solid-state broad-band amplifier of far-infrared radiation (1.5 - 4.2 THz) based on intersubband transitions of hot holes in p-Ge is demonstrated using two p-Ge active crystals, when one operates as an oscillator and one as an amplifier. A peak gain higher than usual for p-Ge lasers has been achieved using time separated excitation of the oscillator and amplifier. Active mode locking of the p-Ge laser has been achieved in the Faraday configuration of electric and magnetic fields with distinct advantages over Voigt geometry. The 200 ps pulses of 80-110 cm-1 radiation were achieved by local gain modulation from an applied rf electric field at the 454 MHz round trip frequency of the laser cavity.
Original languageEnglish
Title of host publicationproceedings of Advanced Semiconductor Lasers and their Applications conference
EditorsL. Hollberg, R.J. Lang
Place of PublicationWashington, DC
PublisherOptical Society of America (OSA)
Pages96-102
DOIs
Publication statusPublished - 2000
Eventconference; Advanced Semiconductor Lasers and their Applications, Santa Barbara 1999 -
Duration: 1 Jan 2000 → …

Publication series

Name
Volume31

Conference

Conferenceconference; Advanced Semiconductor Lasers and their Applications, Santa Barbara 1999
Period1/01/00 → …
OtherAdvanced Semiconductor Lasers and their Applications, Santa Barbara 1999

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