@inproceedings{8e70f77cb0f74755b89fc846bfd2482e,
title = "Faraday-configured mode-locked p-Ge laser and p-Ge far-infrared amplifier",
abstract = "A solid-state broad-band amplifier of far-infrared radiation (1.5 - 4.2 THz) based on intersubband transitions of hot holes in p-Ge is demonstrated using two p-Ge active crystals, when one operates as an oscillator and one as an amplifier. A peak gain higher than usual for p-Ge lasers has been achieved using time separated excitation of the oscillator and amplifier. Active mode locking of the p-Ge laser has been achieved in the Faraday configuration of electric and magnetic fields with distinct advantages over Voigt geometry. The 200 ps pulses of 80-110 cm-1 radiation were achieved by local gain modulation from an applied rf electric field at the 454 MHz round trip frequency of the laser cavity.",
author = "R.E. Peale and A.V. Muravjov and S.H. Withers and R.C. Strijbos and S.G. Pavlov and V.N. Shastin",
year = "2000",
doi = "10.1364/ASLA.1999.96",
language = "English",
publisher = "Optical Society of America (OSA)",
pages = "96--102",
editor = "L. Hollberg and R.J. Lang",
booktitle = "proceedings of Advanced Semiconductor Lasers and their Applications conference",
address = "United States",
note = "conference; Advanced Semiconductor Lasers and their Applications, Santa Barbara 1999 ; Conference date: 01-01-2000",
}