Fabrication technology of metal-cavity nanolasers in III-V membranes on silicon

V.M. Dolores Calzadilla, C.T.T. Geluk, T. Vries, de, B. Smalbrugge, P.J. Veldhoven, van, H.P.M.M. Ambrosius, D. Heiss, A. Fiore, M.K. Smit

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Abstract

Electrically pumped metal-cavity nanolasers in III-V semiconductors are promising for their application in optical interconnects, where high integration density and low optical powers are required. They offer a low threshold current and excellent cooling properties due to the metal encapsulation. In this contribution, an overview about the technology required for the fabrication of a nanolaser coupled to an InP-membrane waveguide on silicon is presented. A variety of techniques are used including electron-beam lithography, dry and wet etching, as well as deposition of dielectrics and metals. The technological challenges to fabricate such a complex nanostructure are also discussed.
Original languageEnglish
Title of host publicationProceedings of the 18th Annual Symposium of the IEEE Photonics Benelux Chapter, 25-26 November 2013, Eindhoven, The Netherlands
Place of PublicationEindhoven
PublisherTechnische Universiteit Eindhoven
Pages243-246
ISBN (Print)978-90-386-3512-5
Publication statusPublished - 2013
Event18th Annual Symposium of the IEEE Photonics Benelux Chapter - Eindhoven, Netherlands
Duration: 25 Nov 201326 Nov 2013
http://www.photonics-benelux.org/symp13/

Conference

Conference18th Annual Symposium of the IEEE Photonics Benelux Chapter
CountryNetherlands
CityEindhoven
Period25/11/1326/11/13
Internet address

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