Abstract
Electrically pumped metal-cavity nanolasers in III-V semiconductors are promising for their application in optical interconnects, where high integration density and low optical powers are required. They offer a low threshold current and excellent cooling properties due to the metal encapsulation. In this contribution, an overview about the technology required for the fabrication of a nanolaser coupled to an InP-membrane waveguide on silicon is presented. A variety of techniques are used including electron-beam lithography, dry and wet etching, as well as deposition of dielectrics and metals. The technological challenges to fabricate such a complex nanostructure are also discussed.
Original language | English |
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Title of host publication | Proceedings of the 18th Annual Symposium of the IEEE Photonics Benelux Chapter, 25-26 November 2013, Eindhoven, The Netherlands |
Place of Publication | Eindhoven |
Publisher | Technische Universiteit Eindhoven |
Pages | 243-246 |
ISBN (Print) | 978-90-386-3512-5 |
Publication status | Published - 2013 |
Event | 18th Annual Symposium of the IEEE Photonics Benelux Chapter - Eindhoven, Netherlands Duration: 25 Nov 2013 → 26 Nov 2013 http://www.photonics-benelux.org/symp13/ |
Conference
Conference | 18th Annual Symposium of the IEEE Photonics Benelux Chapter |
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Country/Territory | Netherlands |
City | Eindhoven |
Period | 25/11/13 → 26/11/13 |
Internet address |