Fabrication, measurement and tuning of a photonic crystal H1-cavity in deeply etched InP/InGaAsP/InP

H.H.J.E. Kicken, I. Barbu, J. Gabriels, R.W. Heijden, van der, R. Nötzel, F. Karouta, H.W.M. Salemink, E.W.J.M. Drift, van der

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

A point defect cavity (H1) was fabricated by deep etching in the InP/InGaAsP/InP system. The optical properties of the devices were experimentally investigated by transmission spectroscopy yielding a Q-factor of ~65. The resonance frequency of the defect cavity was shifted, by infiltrating the surrounding holes with both a polymer and liquid crystal. Furthermore, the transmission was enhanced by a factor « 5 as a result of the filling.
Original languageEnglish
Title of host publicationProceedings of the 20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008, 25-29 May 2008, Versailles, France
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
PagesWeP25-1/4
ISBN (Print)978-1-4244-2258-6
DOIs
Publication statusPublished - 2008
Event20th International Conference on Indium Phosphide and Related Materials (IPRM 2008) - Versailles, France
Duration: 25 May 200829 May 2008
Conference number: 20

Conference

Conference20th International Conference on Indium Phosphide and Related Materials (IPRM 2008)
Abbreviated titleIPRM 2008
CountryFrance
CityVersailles
Period25/05/0829/05/08
OtherInternational Conference on Indium Phosphide and Related Materials, IPRM 2008

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