Fabricating a set of semiconducting nanowires, and electric device comprising a set of nanowires

E.P.A.M. Bakkers (Inventor), L.F. Feiner (Inventor), A.R. Balkenende (Inventor)

Research output: PatentPatent publication

Abstract

The method of fabricating a set of semiconducting nanowires ( 10 ) having a desired wire diameter (d) comprises the steps of providing a set of pre-fabricated semiconducting nanowires ( 10 '), at least one pre-fabricated semiconducting nanowire having a wire diameter (d') larger than the desired wire diameter (d), and reducing the wire diameter of the at least one pre-fabricated nanowire ( 10 ') by etching, the etching being induced by light which is absorbed by the at least one pre-fabricated nanowire ( 10 '), a spectrum of the light being chosen such that the absorption of the at least one pre-fabricated nanowire being significantly reduced when the at least one pre-fabricated nanowire reaches the desired wire diameter (d). The electric device ( 100 ) may comprise a set of nanowires ( 10 ) having the desired wire diameter (d). The apparatus ( 29 ) may be used to execute the method according to the invention.
Original languageEnglish
Patent numberUS20080224115
Publication statusPublished - 18 Sep 2008

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Bakkers, E.P.A.M. (Inventor) ; Feiner, L.F. (Inventor) ; Balkenende, A.R. (Inventor). / Fabricating a set of semiconducting nanowires, and electric device comprising a set of nanowires. Patent No.: US20080224115.
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abstract = "The method of fabricating a set of semiconducting nanowires ( 10 ) having a desired wire diameter (d) comprises the steps of providing a set of pre-fabricated semiconducting nanowires ( 10 '), at least one pre-fabricated semiconducting nanowire having a wire diameter (d') larger than the desired wire diameter (d), and reducing the wire diameter of the at least one pre-fabricated nanowire ( 10 ') by etching, the etching being induced by light which is absorbed by the at least one pre-fabricated nanowire ( 10 '), a spectrum of the light being chosen such that the absorption of the at least one pre-fabricated nanowire being significantly reduced when the at least one pre-fabricated nanowire reaches the desired wire diameter (d). The electric device ( 100 ) may comprise a set of nanowires ( 10 ) having the desired wire diameter (d). The apparatus ( 29 ) may be used to execute the method according to the invention.",
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Fabricating a set of semiconducting nanowires, and electric device comprising a set of nanowires. / Bakkers, E.P.A.M. (Inventor); Feiner, L.F. (Inventor); Balkenende, A.R. (Inventor).

Patent No.: US20080224115.

Research output: PatentPatent publication

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AU - Feiner, L.F.

AU - Balkenende, A.R.

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AB - The method of fabricating a set of semiconducting nanowires ( 10 ) having a desired wire diameter (d) comprises the steps of providing a set of pre-fabricated semiconducting nanowires ( 10 '), at least one pre-fabricated semiconducting nanowire having a wire diameter (d') larger than the desired wire diameter (d), and reducing the wire diameter of the at least one pre-fabricated nanowire ( 10 ') by etching, the etching being induced by light which is absorbed by the at least one pre-fabricated nanowire ( 10 '), a spectrum of the light being chosen such that the absorption of the at least one pre-fabricated nanowire being significantly reduced when the at least one pre-fabricated nanowire reaches the desired wire diameter (d). The electric device ( 100 ) may comprise a set of nanowires ( 10 ) having the desired wire diameter (d). The apparatus ( 29 ) may be used to execute the method according to the invention.

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