Abstract
The method of fabricating a set of semiconducting nanowires ( 10 ) having a desired wire diameter (d) comprises the steps of providing a set of pre-fabricated semiconducting nanowires ( 10 '), at least one pre-fabricated semiconducting nanowire having a wire diameter (d') larger than the desired wire diameter (d), and reducing the wire diameter of the at least one pre-fabricated nanowire ( 10 ') by etching, the etching being induced by light which is absorbed by the at least one pre-fabricated nanowire ( 10 '), a spectrum of the light being chosen such that the absorption of the at least one pre-fabricated nanowire being significantly reduced when the at least one pre-fabricated nanowire reaches the desired wire diameter (d). The electric device ( 100 ) may comprise a set of nanowires ( 10 ) having the desired wire diameter (d). The apparatus ( 29 ) may be used to execute the method according to the invention.
| Original language | English |
|---|---|
| Patent number | US20080224115 |
| Publication status | Published - 18 Sep 2008 |