F+ implants in crystalline Si: The Si interstitial contribution

Pedro Lopez, Lourdes Pelaz, Ray Duffy, P. Meunier-Beillard, F. Roozeboom, K. Van Der Tak, P. Breimer, J.G.M. Van Berkum, M. A. Verheijen, M. Kaiser

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

In this work the Si interstitial contribution of F+ implants in crystalline Si is quantified by the analysis of extended defects and B diffusion in samples implanted with 25 keV F+" and/or 40 keV Si +. We estimate that approximately 0.4 to 0.5 Si interstitials are generated per implanted F+ ion, which is in good agreement with the value resulting from the net separation of Frenkel pairs obtained from MARLOWE simulations. The damage created by F+ implants in crystalline Si may explain the presence of extended defects in F-enriched samples and the evolution of B profiles during annealing. For short anneals, B diffusion is reduced when F+ is co-implanted with Si+ compared to the sample only implanted with Si+, due to the formation of more stable defects that set a lower Si interstitial supersaturation. For longer anneals, when defects have dissolved and TED is complete, B diffusion is higher because the additional damage created by the F+ implant has contributed to enhance B diffusion.

Original languageEnglish
Title of host publicationDoping Engineering for Front-End Processing
Place of PublicationWarrendale
PublisherMaterials Research Society
Pages279-284
Number of pages6
ISBN (Print)9781605110400
Publication statusPublished - 1 Dec 2008
Externally publishedYes
Event2008 Materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: 25 Mar 200827 Mar 2008

Publication series

NameMaterials Research Society symposium proceedings
Volume1070
ISSN (Print)0272-9172

Conference

Conference2008 Materials Research Society Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period25/03/0827/03/08

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