In this work the Si interstitial contribution of F+ implants in crystalline Si is quantified by the analysis of extended defects and B diffusion in samples implanted with 25 keV F+" and/or 40 keV Si +. We estimate that approximately 0.4 to 0.5 Si interstitials are generated per implanted F+ ion, which is in good agreement with the value resulting from the net separation of Frenkel pairs obtained from MARLOWE simulations. The damage created by F+ implants in crystalline Si may explain the presence of extended defects in F-enriched samples and the evolution of B profiles during annealing. For short anneals, B diffusion is reduced when F+ is co-implanted with Si+ compared to the sample only implanted with Si+, due to the formation of more stable defects that set a lower Si interstitial supersaturation. For longer anneals, when defects have dissolved and TED is complete, B diffusion is higher because the additional damage created by the F+ implant has contributed to enhance B diffusion.