External RF substrate biasing as a tool to improve the material properties of hydrogenated amorphous silicon at high deposition rates by means of the expanding thermal plasma

A.H.M. Smets; A.M.H.N. Petit; V. Nadazdy; W.M.M. Kessels; R.A.C.M.M. Swaaij, van; M.C.M. Sanden, van de

External RF substrate biasing as a tool to improve the material properties of hydrogenated amorphous silicon at high deposition rates by means of the expanding thermal plasma

A.H.M. Smets
, A.M.H.N. Petit
, V. Nadazdy
, W.M.M. Kessels
, R.A.C.M.M. Swaaij, van
, M.C.M. Sanden, van de

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

An external rf substrate bias (ERFSB) has been employed during the deposition of hydrogenated amorphous silicon (a-Si:H) by means of the expanding thermal plasma (ETP) deposition technique. The effects of the additional created ion bombardment on the a-Si:H material properties, such as the microstructure and defects, have been studied. The incorporation of nano-sized voids is reduced under ERFSB whereas the incorporation of vacancies is enhanced. The mass density increases with increasing rf power (Prf). For moderate ERFSB (Prf>12 W) the sub gap absorption of the a-Si:H material is reduced drastically. Possible plasma and ion bombardment induced surface processes responsible for these observations are discussed. Finally, it is demonstrated that the performance of the pin cells with a-Si:H films deposited with ERFSB improves.

Original language	English
Title of host publication	Proceedings of the 31st Conference Record on Photovoltaic Specialists, 3-7 January 2005, Coronado Springs Resort, Lake Buena Vista, FL,USA
Pages	1389-1392
Publication status	Published - 2005
Event	31st IEEE Photovoltaic Specialists Conference (PVSC 2005) - Coronado Springs Resort, Lake Buena Vista, United States Duration: 3 Jan 2005 → 7 Jan 2005 Conference number: 31

Conference

Conference	31st IEEE Photovoltaic Specialists Conference (PVSC 2005)
Abbreviated title	PVSC 2005
Country/Territory	United States
City	Lake Buena Vista
Period	3/01/05 → 7/01/05

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Smets, A. H. M., Petit, A. M. H. N., Nadazdy, V., Kessels, W. M. M., Swaaij, van, R. A. C. M. M., & Sanden, van de, M. C. M. (2005). External RF substrate biasing as a tool to improve the material properties of hydrogenated amorphous silicon at high deposition rates by means of the expanding thermal plasma. In Proceedings of the 31st Conference Record on Photovoltaic Specialists, 3-7 January 2005, Coronado Springs Resort, Lake Buena Vista, FL,USA (pp. 1389-1392)

Smets, A.H.M. ; Petit, A.M.H.N. ; Nadazdy, V. et al. / External RF substrate biasing as a tool to improve the material properties of hydrogenated amorphous silicon at high deposition rates by means of the expanding thermal plasma. Proceedings of the 31st Conference Record on Photovoltaic Specialists, 3-7 January 2005, Coronado Springs Resort, Lake Buena Vista, FL,USA. 2005. pp. 1389-1392

@inproceedings{495f6c03042f4b078295fe141ead7bab,

title = "External RF substrate biasing as a tool to improve the material properties of hydrogenated amorphous silicon at high deposition rates by means of the expanding thermal plasma",

abstract = "An external rf substrate bias (ERFSB) has been employed during the deposition of hydrogenated amorphous silicon (a-Si:H) by means of the expanding thermal plasma (ETP) deposition technique. The effects of the additional created ion bombardment on the a-Si:H material properties, such as the microstructure and defects, have been studied. The incorporation of nano-sized voids is reduced under ERFSB whereas the incorporation of vacancies is enhanced. The mass density increases with increasing rf power (Prf). For moderate ERFSB (Prf>12 W) the sub gap absorption of the a-Si:H material is reduced drastically. Possible plasma and ion bombardment induced surface processes responsible for these observations are discussed. Finally, it is demonstrated that the performance of the pin cells with a-Si:H films deposited with ERFSB improves.",

author = "A.H.M. Smets and A.M.H.N. Petit and V. Nadazdy and W.M.M. Kessels and \{Swaaij, van\}, R.A.C.M.M. and \{Sanden, van de\}, M.C.M.",

year = "2005",

language = "English",

pages = "1389--1392",

booktitle = "Proceedings of the 31st Conference Record on Photovoltaic Specialists, 3-7 January 2005, Coronado Springs Resort, Lake Buena Vista, FL,USA",

note = "31st IEEE Photovoltaic Specialists Conference (PVSC 2005), PVSC 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

}

Smets, AHM, Petit, AMHN, Nadazdy, V, Kessels, WMM, Swaaij, van, RACMM & Sanden, van de, MCM 2005, External RF substrate biasing as a tool to improve the material properties of hydrogenated amorphous silicon at high deposition rates by means of the expanding thermal plasma. in Proceedings of the 31st Conference Record on Photovoltaic Specialists, 3-7 January 2005, Coronado Springs Resort, Lake Buena Vista, FL,USA. pp. 1389-1392, 31st IEEE Photovoltaic Specialists Conference (PVSC 2005), Lake Buena Vista, Florida, United States, 3/01/05.

External RF substrate biasing as a tool to improve the material properties of hydrogenated amorphous silicon at high deposition rates by means of the expanding thermal plasma. / Smets, A.H.M.; Petit, A.M.H.N.; Nadazdy, V. et al.
Proceedings of the 31st Conference Record on Photovoltaic Specialists, 3-7 January 2005, Coronado Springs Resort, Lake Buena Vista, FL,USA. 2005. p. 1389-1392.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - External RF substrate biasing as a tool to improve the material properties of hydrogenated amorphous silicon at high deposition rates by means of the expanding thermal plasma

AU - Smets, A.H.M.

AU - Petit, A.M.H.N.

AU - Nadazdy, V.

AU - Kessels, W.M.M.

AU - Swaaij, van, R.A.C.M.M.

AU - Sanden, van de, M.C.M.

N1 - Conference code: 31

PY - 2005

Y1 - 2005

N2 - An external rf substrate bias (ERFSB) has been employed during the deposition of hydrogenated amorphous silicon (a-Si:H) by means of the expanding thermal plasma (ETP) deposition technique. The effects of the additional created ion bombardment on the a-Si:H material properties, such as the microstructure and defects, have been studied. The incorporation of nano-sized voids is reduced under ERFSB whereas the incorporation of vacancies is enhanced. The mass density increases with increasing rf power (Prf). For moderate ERFSB (Prf>12 W) the sub gap absorption of the a-Si:H material is reduced drastically. Possible plasma and ion bombardment induced surface processes responsible for these observations are discussed. Finally, it is demonstrated that the performance of the pin cells with a-Si:H films deposited with ERFSB improves.

AB - An external rf substrate bias (ERFSB) has been employed during the deposition of hydrogenated amorphous silicon (a-Si:H) by means of the expanding thermal plasma (ETP) deposition technique. The effects of the additional created ion bombardment on the a-Si:H material properties, such as the microstructure and defects, have been studied. The incorporation of nano-sized voids is reduced under ERFSB whereas the incorporation of vacancies is enhanced. The mass density increases with increasing rf power (Prf). For moderate ERFSB (Prf>12 W) the sub gap absorption of the a-Si:H material is reduced drastically. Possible plasma and ion bombardment induced surface processes responsible for these observations are discussed. Finally, it is demonstrated that the performance of the pin cells with a-Si:H films deposited with ERFSB improves.

M3 - Conference contribution

SP - 1389

EP - 1392

BT - Proceedings of the 31st Conference Record on Photovoltaic Specialists, 3-7 January 2005, Coronado Springs Resort, Lake Buena Vista, FL,USA

T2 - 31st IEEE Photovoltaic Specialists Conference (PVSC 2005)

Y2 - 3 January 2005 through 7 January 2005

ER -

Smets AHM, Petit AMHN, Nadazdy V, Kessels WMM, Swaaij, van RACMM, Sanden, van de MCM. External RF substrate biasing as a tool to improve the material properties of hydrogenated amorphous silicon at high deposition rates by means of the expanding thermal plasma. In Proceedings of the 31st Conference Record on Photovoltaic Specialists, 3-7 January 2005, Coronado Springs Resort, Lake Buena Vista, FL,USA. 2005. p. 1389-1392

External RF substrate biasing as a tool to improve the material properties of hydrogenated amorphous silicon at high deposition rates by means of the expanding thermal plasma

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