Exploration of carbon nanotubes for efficient power delivery

Research output: Chapter in Book/Report/Conference proceedingChapterAcademicpeer-review

1 Citation (Scopus)

Abstract

Carbon nanotubes (CNTs) due to their unique mechanical, thermal, and electrical properties are being investigated as promising candidate material for on-chip and off-chip interconnects. The attractive mechanical properties of CNTs, including high Young’s modulus, resiliency, and low thermal expansion coefficient offer great advantage for reliable and strong interconnects, and even more so for three-dimensional (3D) integration. Through-silicon-vias (TSVs) enable 3D integration and implementation of denser, faster, and heterogeneous circuits, which also lead to excessive power densities and elevated temperatures. Due to their unique properties, CNTs present an opportunity to address these challenges and provide solutions for reliable power delivery networks in two-dimensional (2D) and 3D integration. In this chapter, we perform detailed analyses of horizontally aligned CNTs and report on their efficiency to be exploited for both 2D and 3D power delivery networks.

Original languageEnglish
Title of host publicationNano-CMOS and Post-CMOS Electronics
Subtitle of host publicationDevices and Modelling
PublisherInstitution of Engineering and Technology
Chapter9
Pages265-285
Number of pages21
ISBN (Electronic)9781849199988
ISBN (Print)9781849199971
DOIs
Publication statusPublished - 1 Jan 2016
Externally publishedYes

Keywords

  • 2D power delivery network reliability
  • 3D integration
  • 3D power delivery network reliability
  • Carbon nanotubes
  • Electrical properties
  • Heterogeneous circuits
  • Integrated circuit interconnections
  • Integrated circuit reliability
  • Mechanical properties
  • Off-chip interconnect
  • On-chip interconnect
  • Power densities
  • Resiliency
  • Thermal expansion
  • Thermal expansion coefficient
  • Thermal properties
  • Three-dimensional integrated circuits
  • Three-dimensional integration
  • Through-silicon-vias
  • TSV
  • Young modulus
  • Young’s modulus

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