Abstract
Carbon nanotubes (CNTs) due to their unique mechanical, thermal, and electrical properties are being investigated as promising candidate material for on-chip and off-chip interconnects. The attractive mechanical properties of CNTs, including high Young’s modulus, resiliency, and low thermal expansion coefficient offer great advantage for reliable and strong interconnects, and even more so for three-dimensional (3D) integration. Through-silicon-vias (TSVs) enable 3D integration and implementation of denser, faster, and heterogeneous circuits, which also lead to excessive power densities and elevated temperatures. Due to their unique properties, CNTs present an opportunity to address these challenges and provide solutions for reliable power delivery networks in two-dimensional (2D) and 3D integration. In this chapter, we perform detailed analyses of horizontally aligned CNTs and report on their efficiency to be exploited for both 2D and 3D power delivery networks.
Original language | English |
---|---|
Title of host publication | Nano-CMOS and Post-CMOS Electronics |
Subtitle of host publication | Devices and Modelling |
Publisher | Institution of Engineering and Technology |
Chapter | 9 |
Pages | 265-285 |
Number of pages | 21 |
ISBN (Electronic) | 9781849199988 |
ISBN (Print) | 9781849199971 |
DOIs | |
Publication status | Published - 1 Jan 2016 |
Externally published | Yes |
Keywords
- 2D power delivery network reliability
- 3D integration
- 3D power delivery network reliability
- Carbon nanotubes
- Electrical properties
- Heterogeneous circuits
- Integrated circuit interconnections
- Integrated circuit reliability
- Mechanical properties
- Off-chip interconnect
- On-chip interconnect
- Power densities
- Resiliency
- Thermal expansion
- Thermal expansion coefficient
- Thermal properties
- Three-dimensional integrated circuits
- Three-dimensional integration
- Through-silicon-vias
- TSV
- Young modulus
- Young’s modulus