TY - GEN
T1 - Experimental study on the mechanism of carbon diffusion in silicon
AU - Cowern, Nick E.B.
AU - Colombeau, B.
AU - Roozeboom, F.
AU - Hopstaken, M.
AU - Snijders, H.
AU - Meunier-Beillard, P.
AU - Lerch, W.
PY - 2002/1/1
Y1 - 2002/1/1
N2 - CVD-grown lightly C-doped superlattices with peak C concentrations of 2.1018/cm2 and 2.1019/cm2 were annealed in NH3, N2/H2, N2, and O2 ambient gases to investigate the influence of a range of point-defect conditions on C diffusion at the nanometer scale. C profiles were measured by Secondary-ion mass spectroscopy. The profiles exhibit exponential-like diffusion consistent with a 'long hop' diffusion process with a characteristic migration length λ (=19 ± 3 nm at 850 °C). Within experimental errors the value of λ is the same for all the ambient gases used, whereas the migration frequency g increases by two orders of magnitude as the ambient gas is changed from NH3 ambient (interstitial undersaturation) to O2 ambient (interstitial supersaturation), and decreases as a function of C concentration in the as-grown superlattice. The results confirm that C diffuses predominantly by a kick out mechanism under near-equilibrium diffusion conditions. Initial results support the chemical-pump model for suppression of diffusion in C-doped silicon.
AB - CVD-grown lightly C-doped superlattices with peak C concentrations of 2.1018/cm2 and 2.1019/cm2 were annealed in NH3, N2/H2, N2, and O2 ambient gases to investigate the influence of a range of point-defect conditions on C diffusion at the nanometer scale. C profiles were measured by Secondary-ion mass spectroscopy. The profiles exhibit exponential-like diffusion consistent with a 'long hop' diffusion process with a characteristic migration length λ (=19 ± 3 nm at 850 °C). Within experimental errors the value of λ is the same for all the ambient gases used, whereas the migration frequency g increases by two orders of magnitude as the ambient gas is changed from NH3 ambient (interstitial undersaturation) to O2 ambient (interstitial supersaturation), and decreases as a function of C concentration in the as-grown superlattice. The results confirm that C diffuses predominantly by a kick out mechanism under near-equilibrium diffusion conditions. Initial results support the chemical-pump model for suppression of diffusion in C-doped silicon.
UR - http://www.scopus.com/inward/record.url?scp=0036447827&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0036447827
SN - 1-55899-653-2
T3 - Materials Research Society Symposium - Proceedings
SP - 255
EP - 260
BT - Silicon Front-End Junction Formation Technologies
A2 - Downey, D.F.
PB - Materials Research Society
CY - Warrendale
T2 - Silicon Front-End Junction Formation Technologies
Y2 - 2 April 2002 through 4 April 2002
ER -