Experimental study on the mechanism of carbon diffusion in silicon

Nick E.B. Cowern, B. Colombeau, F. Roozeboom, M. Hopstaken, H. Snijders, P. Meunier-Beillard, W. Lerch

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

CVD-grown lightly C-doped superlattices with peak C concentrations of 2.1018/cm2 and 2.1019/cm2 were annealed in NH3, N2/H2, N2, and O2 ambient gases to investigate the influence of a range of point-defect conditions on C diffusion at the nanometer scale. C profiles were measured by Secondary-ion mass spectroscopy. The profiles exhibit exponential-like diffusion consistent with a 'long hop' diffusion process with a characteristic migration length λ (=19 ± 3 nm at 850 °C). Within experimental errors the value of λ is the same for all the ambient gases used, whereas the migration frequency g increases by two orders of magnitude as the ambient gas is changed from NH3 ambient (interstitial undersaturation) to O2 ambient (interstitial supersaturation), and decreases as a function of C concentration in the as-grown superlattice. The results confirm that C diffuses predominantly by a kick out mechanism under near-equilibrium diffusion conditions. Initial results support the chemical-pump model for suppression of diffusion in C-doped silicon.

Original languageEnglish
Title of host publicationSilicon Front-End Junction Formation Technologies
EditorsD.F. Downey
Place of PublicationWarrendale
PublisherMaterials Research Society
Pages255-260
Number of pages6
ISBN (Print)1-55899-653-2
Publication statusPublished - 1 Jan 2002
Externally publishedYes
EventSilicon Front-End Junction Formation Technologies - San Francisco, CA, United States
Duration: 2 Apr 20024 Apr 2002

Publication series

NameMaterials Research Society Symposium - Proceedings
Volume717
ISSN (Print)0272-9172

Conference

ConferenceSilicon Front-End Junction Formation Technologies
CountryUnited States
CitySan Francisco, CA
Period2/04/024/04/02

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