Experimental investigation of N-MOS inversion layers in the electric quantum limit

A. Kalnitsky, A.R. Boothroyd, J.P. Ellul, N.G. Tarr, L. Weaver, R.G.C. Beerkens

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Abstract

The authors report on the exptl. detn. of inversion electron charge d., silicon surface potential, and effective electron mobility vs. oxide elec. field, for NMOSFETs with gate oxide thickness Tox = 2.2 nm operating far beyond the limit of applicability of Boltzmann relations in the inversion layer. Such oxides have the same values of destructive breakdown elec. field, dielec. const., and trap d. at the silicon-oxide interface as \"thick\" oxides. [on SciFinder (R)]
Original languageEnglish
Pages (from-to)367-372
JournalJournal of Electronic Materials
Volume21
Issue number3
DOIs
Publication statusPublished - 1992

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    Kalnitsky, A., Boothroyd, A. R., Ellul, J. P., Tarr, N. G., Weaver, L., & Beerkens, R. G. C. (1992). Experimental investigation of N-MOS inversion layers in the electric quantum limit. Journal of Electronic Materials, 21(3), 367-372. https://doi.org/10.1007/BF02660468