Experimental investigation of N-MOS inversion layers in the electric quantum limit

A. Kalnitsky; A.R. Boothroyd; J.P. Ellul; N.G. Tarr; L. Weaver; R.G.C. Beerkens

doi:10.1007/BF02660468

Experimental investigation of N-MOS inversion layers in the electric quantum limit

A. Kalnitsky, A.R. Boothroyd, J.P. Ellul, N.G. Tarr, L. Weaver, R.G.C. Beerkens

Department of Chemical Engineering and Chemistry

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The authors report on the exptl. detn. of inversion electron charge d., silicon surface potential, and effective electron mobility vs. oxide elec. field, for NMOSFETs with gate oxide thickness Tox = 2.2 nm operating far beyond the limit of applicability of Boltzmann relations in the inversion layer. Such oxides have the same values of destructive breakdown elec. field, dielec. const., and trap d. at the silicon-oxide interface as \"thick\" oxides. [on SciFinder (R)]

Original language	English
Pages (from-to)	367-372
Journal	Journal of Electronic Materials
Volume	21
Issue number	3
DOIs	https://doi.org/10.1007/BF02660468
Publication status	Published - 1992

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Kalnitsky, A., Boothroyd, A. R., Ellul, J. P., Tarr, N. G., Weaver, L., & Beerkens, R. G. C. (1992). Experimental investigation of N-MOS inversion layers in the electric quantum limit. Journal of Electronic Materials, 21(3), 367-372. https://doi.org/10.1007/BF02660468

@article{af90a0f8297845feb67ccdd189c03f41,

title = "Experimental investigation of N-MOS inversion layers in the electric quantum limit",

abstract = "The authors report on the exptl. detn. of inversion electron charge d., silicon surface potential, and effective electron mobility vs. oxide elec. field, for NMOSFETs with gate oxide thickness Tox = 2.2 nm operating far beyond the limit of applicability of Boltzmann relations in the inversion layer. Such oxides have the same values of destructive breakdown elec. field, dielec. const., and trap d. at the silicon-oxide interface as \{"}thick\{"} oxides. [on SciFinder (R)]",

author = "A. Kalnitsky and A.R. Boothroyd and J.P. Ellul and N.G. Tarr and L. Weaver and R.G.C. Beerkens",

year = "1992",

doi = "10.1007/BF02660468",

language = "English",

volume = "21",

pages = "367--372",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer",

number = "3",

}

TY - JOUR

T1 - Experimental investigation of N-MOS inversion layers in the electric quantum limit

AU - Kalnitsky, A.

AU - Boothroyd, A.R.

AU - Ellul, J.P.

AU - Tarr, N.G.

AU - Weaver, L.

AU - Beerkens, R.G.C.

PY - 1992

Y1 - 1992

N2 - The authors report on the exptl. detn. of inversion electron charge d., silicon surface potential, and effective electron mobility vs. oxide elec. field, for NMOSFETs with gate oxide thickness Tox = 2.2 nm operating far beyond the limit of applicability of Boltzmann relations in the inversion layer. Such oxides have the same values of destructive breakdown elec. field, dielec. const., and trap d. at the silicon-oxide interface as \"thick\" oxides. [on SciFinder (R)]

AB - The authors report on the exptl. detn. of inversion electron charge d., silicon surface potential, and effective electron mobility vs. oxide elec. field, for NMOSFETs with gate oxide thickness Tox = 2.2 nm operating far beyond the limit of applicability of Boltzmann relations in the inversion layer. Such oxides have the same values of destructive breakdown elec. field, dielec. const., and trap d. at the silicon-oxide interface as \"thick\" oxides. [on SciFinder (R)]

U2 - 10.1007/BF02660468

DO - 10.1007/BF02660468

M3 - Article

VL - 21

SP - 367

EP - 372

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 3

ER -