Expansion of the electrons in an EUV-induced plasma in argon

Research output: Contribution to conferencePosterAcademic

Abstract

There is an increasing global demand for more computational power and memory capacity. To achieve further miniaturization of semiconductors, the next logical step is to use lithography machines based on Extreme Ultra- Violet (EUV) radiation at 13.5nm (92 eV). The topic of this contribution is the physical processes, which occur in a low pressure gas such as Ar and H2 (0.1{10 Pa) due to absorption of EUV photons and the creation of EUV induced plasma. The long term impact of such a plasma on the lithography machine is of main interest for the industry. The electron density is measured with microwave cavity resonance spectroscopy (MCRS). In MCRS measurements the resonant frequency of a specic mode in a cavity is determined, this frequency depends on the electron density in the cavity. In principle, this is an averaged density of the entire cavity. However, by combining several resonant modes, we can obtain information on the spatial distribution of the electron density. In this contribution we show that we can obtain information about the expansion of an EUV-induced plasma in argon by combining the TM010 and TM110 mode.

Conference

Conference27th NNV Symposium on Plasma Physics and Radiation Technology
CountryNetherlands
CityLunteren
Period10/03/1511/03/15
Other
Internet address

Fingerprint

argon
cavities
expansion
electrons
lithography
microwaves
miniaturization
resonant frequencies
spatial distribution
low pressure
industries
photons
radiation

Cite this

van der Horst, R. M., Beckers, J., Osorio, E. A., & Banine, V. Y. (2015). Expansion of the electrons in an EUV-induced plasma in argon. Poster session presented at 27th NNV Symposium on Plasma Physics and Radiation Technology, Lunteren, Netherlands.
van der Horst, R.M. ; Beckers, J. ; Osorio, E.A. ; Banine, V.Y./ Expansion of the electrons in an EUV-induced plasma in argon. Poster session presented at 27th NNV Symposium on Plasma Physics and Radiation Technology, Lunteren, Netherlands.
@conference{6599543228b84f75a0cc4850c17fa54c,
title = "Expansion of the electrons in an EUV-induced plasma in argon",
abstract = "There is an increasing global demand for more computational power and memory capacity. To achieve further miniaturization of semiconductors, the next logical step is to use lithography machines based on Extreme Ultra- Violet (EUV) radiation at 13.5nm (92 eV). The topic of this contribution is the physical processes, which occur in a low pressure gas such as Ar and H2 (0.1{10 Pa) due to absorption of EUV photons and the creation of EUV induced plasma. The long term impact of such a plasma on the lithography machine is of main interest for the industry. The electron density is measured with microwave cavity resonance spectroscopy (MCRS). In MCRS measurements the resonant frequency of a specic mode in a cavity is determined, this frequency depends on the electron density in the cavity. In principle, this is an averaged density of the entire cavity. However, by combining several resonant modes, we can obtain information on the spatial distribution of the electron density. In this contribution we show that we can obtain information about the expansion of an EUV-induced plasma in argon by combining the TM010 and TM110 mode.",
author = "{van der Horst}, R.M. and J. Beckers and E.A. Osorio and V.Y. Banine",
note = "Proceedings of the 27th NNV-Symposium on Plasma Physics and Radiation Technology, 10-11 March 2015, Lunteren, The Netherlands; 27th NNV Symposium on Plasma Physics and Radiation Technology ; Conference date: 10-03-2015 Through 11-03-2015",
year = "2015",
language = "English",
url = "http://www.plasmalunteren.nl/sites/default/files/booklet_lunteren_2015.pdf",

}

van der Horst, RM, Beckers, J, Osorio, EA & Banine, VY 2015, 'Expansion of the electrons in an EUV-induced plasma in argon' 27th NNV Symposium on Plasma Physics and Radiation Technology, Lunteren, Netherlands, 10/03/15 - 11/03/15, .

Expansion of the electrons in an EUV-induced plasma in argon. / van der Horst, R.M.; Beckers, J.; Osorio, E.A.; Banine, V.Y.

2015. Poster session presented at 27th NNV Symposium on Plasma Physics and Radiation Technology, Lunteren, Netherlands.

Research output: Contribution to conferencePosterAcademic

TY - CONF

T1 - Expansion of the electrons in an EUV-induced plasma in argon

AU - van der Horst,R.M.

AU - Beckers,J.

AU - Osorio,E.A.

AU - Banine,V.Y.

N1 - Proceedings of the 27th NNV-Symposium on Plasma Physics and Radiation Technology, 10-11 March 2015, Lunteren, The Netherlands

PY - 2015

Y1 - 2015

N2 - There is an increasing global demand for more computational power and memory capacity. To achieve further miniaturization of semiconductors, the next logical step is to use lithography machines based on Extreme Ultra- Violet (EUV) radiation at 13.5nm (92 eV). The topic of this contribution is the physical processes, which occur in a low pressure gas such as Ar and H2 (0.1{10 Pa) due to absorption of EUV photons and the creation of EUV induced plasma. The long term impact of such a plasma on the lithography machine is of main interest for the industry. The electron density is measured with microwave cavity resonance spectroscopy (MCRS). In MCRS measurements the resonant frequency of a specic mode in a cavity is determined, this frequency depends on the electron density in the cavity. In principle, this is an averaged density of the entire cavity. However, by combining several resonant modes, we can obtain information on the spatial distribution of the electron density. In this contribution we show that we can obtain information about the expansion of an EUV-induced plasma in argon by combining the TM010 and TM110 mode.

AB - There is an increasing global demand for more computational power and memory capacity. To achieve further miniaturization of semiconductors, the next logical step is to use lithography machines based on Extreme Ultra- Violet (EUV) radiation at 13.5nm (92 eV). The topic of this contribution is the physical processes, which occur in a low pressure gas such as Ar and H2 (0.1{10 Pa) due to absorption of EUV photons and the creation of EUV induced plasma. The long term impact of such a plasma on the lithography machine is of main interest for the industry. The electron density is measured with microwave cavity resonance spectroscopy (MCRS). In MCRS measurements the resonant frequency of a specic mode in a cavity is determined, this frequency depends on the electron density in the cavity. In principle, this is an averaged density of the entire cavity. However, by combining several resonant modes, we can obtain information on the spatial distribution of the electron density. In this contribution we show that we can obtain information about the expansion of an EUV-induced plasma in argon by combining the TM010 and TM110 mode.

M3 - Poster

ER -

van der Horst RM, Beckers J, Osorio EA, Banine VY. Expansion of the electrons in an EUV-induced plasma in argon. 2015. Poster session presented at 27th NNV Symposium on Plasma Physics and Radiation Technology, Lunteren, Netherlands.