@inproceedings{d733bc1a11b64ce1955e1815bf745631,
title = "Expanding thermal plasma for low-k dielectrics deposition",
abstract = "As the need for low-k dielectrics in the ULSI technology becomes urgent, the research primarily focuses on the deposition of novel materials with appropriate electrical properties and on the challenges concerning their integration with subsequent processing steps. In this framework we introduce the expanding thermal plasma as a novel remote technique for the deposition of low-k carbon-doped silicon dioxide films from argon/hexamethyldisiloxane/oxygen mixtures. We have obtained k values in the range 2.9-3.4 for films characterized by acceptable mechanical properties (hardness of 1 GPa).",
author = "M. Creatore and Y. Barrell and W.M.M. Kessels and {van de Sanden}, M.C.M.",
year = "2003",
month = dec,
day = "1",
doi = "10.1557/PROC-766-E6.9",
language = "English",
series = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",
pages = "339--344",
booktitle = "Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003",
address = "United States",
note = "Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 ; Conference date: 21-04-2003 Through 25-04-2003",
}