Expanding thermal plasma for low-k dielectrics deposition

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Abstract

As the need for low-k dielectrics in the ULSI technology becomes urgent, the research primarily focuses on the deposition of novel materials with appropriate electrical properties and on the challenges concerning their integration with subsequent processing steps. In this framework we introduce the expanding thermal plasma as a novel remote technique for the deposition of low-k carbon-doped silicon dioxide films from argon/hexamethyldisiloxane/oxygen mixtures. We have obtained k values in the range 2.9-3.4 for films characterized by acceptable mechanical properties (hardness of 1 GPa).

Original languageEnglish
Title of host publicationMaterials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003
Place of PublicationWarrendale
PublisherMaterials Research Society
Pages339-344
Number of pages6
DOIs
Publication statusPublished - 1 Dec 2003
EventMaterials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 - San Francisco, CA, United States
Duration: 21 Apr 200325 Apr 2003

Publication series

NameMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
ISSN (Print)0272-9172

Conference

ConferenceMaterials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003
CountryUnited States
CitySan Francisco, CA
Period21/04/0325/04/03

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