Abstract
A new method for low temperature deposition of surface textured ZnO is presented utilizing an expanding thermal plasma created by a cascaded arc. Films have been deposited at 150-350°C at a rate of typically 0.65-0.75 nm/s, exhibiting low sheet resistance (> 10 Ω/□), high transmittance (>80%) and a rough surface texture. Surface roughness increases with increasing deposition temperature and film thickness. First pin a-Si:H solar cells deposited on this ZnO show initial efficiencies approaching 10%.
Original language | English |
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Title of host publication | Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000 |
Place of Publication | Piscataway |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 822-824 |
Number of pages | 3 |
ISBN (Electronic) | 0780357728 |
DOIs | |
Publication status | Published - 1 Jan 2000 |
Event | 28th IEEE Photovoltaic Specialists Conference (PVSC 2000) - Anchorage Hilton Hotel, Anchorage, United States Duration: 15 Sept 2000 → 22 Sept 2000 Conference number: 28 |
Conference
Conference | 28th IEEE Photovoltaic Specialists Conference (PVSC 2000) |
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Abbreviated title | PSVC 2000 |
Country/Territory | United States |
City | Anchorage |
Period | 15/09/00 → 22/09/00 |