A review. Fundamental studies which are relevant for the successful industrial implementation of the expanding thermal plasma set up, a novel plasma source characterized by high deposition rates (1-100 nm/s), are discussed. The plasma chem. in Ar/O2/hexamethyldisiloxane and Ar/O2/octamethylcyclosiloxane-fed expanding thermal plasma setup and the influence of an addnl. ion bombardment during high rate Si3N4 deposition from Ar/N2/SiH4 and Ar/NH3/SiH4 mixt. is reviewed. The versatile control of parameters in the ETP setup (i.e., arc current, gas flow rates and working pressure) enable specific tuning of the film properties (i.e., chem. compn., optical and mech. properties). In addn. an example of a fundamental study of the gas phase and surface loss rates of Si and SiH3 radicals during plasma deposition of hydrogenated amorphous silicon as obtained from time-resolved cavity ringdown absorption measurements are demonstrated.
|Title of host publication||EUROCVD-15 : Fifteenth European Conference on Chemical Vapor Deposition; proceedings of the international symposium; [held from 5th to 9th September 2005 in Bochum, Germany]|
|Place of Publication||Pennington|
|Publisher||Electrochemical Society, Inc.|
|Publication status||Published - 2005|
|Name||Proceedings - Electrochemical Society|