Exciton dark states in the recombination kinetics of InAs quantum dots

A. Vinattieri; M. Zamfirescu; M. Gurioli; M. Colocci; S. Sanguinetti; R. Nötzel

doi:10.1002/pssa.200562031

Exciton dark states in the recombination kinetics of InAs quantum dots

A. Vinattieri, M. Zamfirescu, M. Gurioli, M. Colocci, S. Sanguinetti, R. Nötzel

Photonics and Semiconductor Nanophysics

Research output: Contribution to journal › Article › Academic › peer-review

1 Citation (Scopus)

Abstract

Time-resolved photoluminescence experiments in high quality InAs/GaAs quantum dots clearly show theinterplay between radiative recombination and thermalization processes. In particular from temperaturedependent PL spectra, we prove that the carrier recombination dynamics is ruled by the thermal populationin optically inactive exciton states, related to the population of the first excited hole levels. Moreovertime-resolved spectra do not show any relaxation bottleneck, indicating an efficient carrier capture and afast energy relaxation of the photogenerated carriers.

Original language	English
Pages (from-to)	2604-2608
Number of pages	5
Journal	Physica Status Solidi A : Applications and material science
Volume	202
Issue number	14
DOIs	https://doi.org/10.1002/pssa.200562031
Publication status	Published - 2005

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10.1002/pssa.200562031

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title = "Exciton dark states in the recombination kinetics of InAs quantum dots",

abstract = "Time-resolved photoluminescence experiments in high quality InAs/GaAs quantum dots clearly show theinterplay between radiative recombination and thermalization processes. In particular from temperaturedependent PL spectra, we prove that the carrier recombination dynamics is ruled by the thermal populationin optically inactive exciton states, related to the population of the first excited hole levels. Moreovertime-resolved spectra do not show any relaxation bottleneck, indicating an efficient carrier capture and afast energy relaxation of the photogenerated carriers.",

author = "A. Vinattieri and M. Zamfirescu and M. Gurioli and M. Colocci and S. Sanguinetti and R. N{\"o}tzel",

year = "2005",

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T1 - Exciton dark states in the recombination kinetics of InAs quantum dots

AU - Vinattieri, A.

AU - Zamfirescu, M.

AU - Gurioli, M.

AU - Colocci, M.

AU - Sanguinetti, S.

AU - Nötzel, R.

PY - 2005

Y1 - 2005

N2 - Time-resolved photoluminescence experiments in high quality InAs/GaAs quantum dots clearly show theinterplay between radiative recombination and thermalization processes. In particular from temperaturedependent PL spectra, we prove that the carrier recombination dynamics is ruled by the thermal populationin optically inactive exciton states, related to the population of the first excited hole levels. Moreovertime-resolved spectra do not show any relaxation bottleneck, indicating an efficient carrier capture and afast energy relaxation of the photogenerated carriers.

AB - Time-resolved photoluminescence experiments in high quality InAs/GaAs quantum dots clearly show theinterplay between radiative recombination and thermalization processes. In particular from temperaturedependent PL spectra, we prove that the carrier recombination dynamics is ruled by the thermal populationin optically inactive exciton states, related to the population of the first excited hole levels. Moreovertime-resolved spectra do not show any relaxation bottleneck, indicating an efficient carrier capture and afast energy relaxation of the photogenerated carriers.

U2 - 10.1002/pssa.200562031

DO - 10.1002/pssa.200562031

M3 - Article

SN - 1862-6300

VL - 202

SP - 2604

EP - 2608

JO - Physica Status Solidi A : Applications and material science

JF - Physica Status Solidi A : Applications and material science

IS - 14

ER -

Exciton dark states in the recombination kinetics of InAs quantum dots

Abstract

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