Exciton dark states in the recombination kinetics of InAs quantum dots

A. Vinattieri, M. Zamfirescu, M. Gurioli, M. Colocci, S. Sanguinetti, R. Nötzel

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)

Abstract

Time-resolved photoluminescence experiments in high quality InAs/GaAs quantum dots clearly show theinterplay between radiative recombination and thermalization processes. In particular from temperaturedependent PL spectra, we prove that the carrier recombination dynamics is ruled by the thermal populationin optically inactive exciton states, related to the population of the first excited hole levels. Moreovertime-resolved spectra do not show any relaxation bottleneck, indicating an efficient carrier capture and afast energy relaxation of the photogenerated carriers.
Original languageEnglish
Pages (from-to)2604-2608
Number of pages5
JournalPhysica Status Solidi A : Applications and material science
Volume202
Issue number14
DOIs
Publication statusPublished - 2005

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