Excellent surface passivation by hydrogenated amorphous silicon deposited at rates >1 nm/s by the expanding thermal plasma technique

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Original language	English
Title of host publication	Proceedings 21st European Photovoltaic Solar Energy Conference, Dresden, Germany
Pages	435-
Publication status	Published - 2006

Cite this

@inproceedings{b2ad4ff0b76a466ca793a7c5d253e408,

title = "Excellent surface passivation by hydrogenated amorphous silicon deposited at rates >1 nm/s by the expanding thermal plasma technique",

author = "B. Hoex and W.M.M. Kessels and M.D. Bijker and {Sanden, van de}, M.C.M.",

year = "2006",

language = "English",

pages = "435--",

booktitle = "Proceedings 21st European Photovoltaic Solar Energy Conference, Dresden, Germany",

}

Proceedings 21st European Photovoltaic Solar Energy Conference, Dresden, Germany. 2006. p. 435-.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Excellent surface passivation by hydrogenated amorphous silicon deposited at rates >1 nm/s by the expanding thermal plasma technique

AU - Hoex, B.

AU - Kessels, W.M.M.

AU - Bijker, M.D.

AU - Sanden, van de, M.C.M.

PY - 2006

Y1 - 2006

M3 - Conference contribution

SP - 435-

BT - Proceedings 21st European Photovoltaic Solar Energy Conference, Dresden, Germany

ER -