Excellent surface passivation by hydrogenated amorphous silicon deposited at rates >1 nm/s by the expanding thermal plasma technique

B. Hoex, W.M.M. Kessels, M.D. Bijker, M.C.M. Sanden, van de

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Original languageEnglish
Title of host publicationProceedings 21st European Photovoltaic Solar Energy Conference, Dresden, Germany
Pages435-
Publication statusPublished - 2006

Cite this