TY - JOUR
T1 - Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
AU - Dingemans, G.
AU - Sanden, van de, M.C.M.
AU - Kessels, W.M.M.
PY - 2011
Y1 - 2011
N2 - It is demonstrated that the application of an ultrathin aluminum oxide (Al2O3) capping film can improve the level of silicon surface passivation obtained by low-temperature synthesized SiO2 profoundly. For such stacks, a very high level of surface passivation was achieved after annealing, with Seff <2 cm/s for 3.5 O cm n-type c-Si. This can be attributed primarily to a low interface defect density (Dit <1011 eV–1 cm–2). Consequently, the Al2O3 capping layer induced a high level of chemical passivation at the Si/SiO2 interface. Moreover, the stacks showed an exceptional stability during high-temperature firing processes and therefore provide a low temperature (=400 °C) alternative to thermally-grown SiO2.
AB - It is demonstrated that the application of an ultrathin aluminum oxide (Al2O3) capping film can improve the level of silicon surface passivation obtained by low-temperature synthesized SiO2 profoundly. For such stacks, a very high level of surface passivation was achieved after annealing, with Seff <2 cm/s for 3.5 O cm n-type c-Si. This can be attributed primarily to a low interface defect density (Dit <1011 eV–1 cm–2). Consequently, the Al2O3 capping layer induced a high level of chemical passivation at the Si/SiO2 interface. Moreover, the stacks showed an exceptional stability during high-temperature firing processes and therefore provide a low temperature (=400 °C) alternative to thermally-grown SiO2.
U2 - 10.1002/pssr.201004378
DO - 10.1002/pssr.201004378
M3 - Article
SN - 1862-6254
VL - 1
SP - 22
EP - 24
JO - Physica Status Solidi : Rapid Research Letters
JF - Physica Status Solidi : Rapid Research Letters
ER -