Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film

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Abstract

It is demonstrated that the application of an ultrathin aluminum oxide (Al2O3) capping film can improve the level of silicon surface passivation obtained by low-temperature synthesized SiO2 profoundly. For such stacks, a very high level of surface passivation was achieved after annealing, with Seff <2 cm/s for 3.5 O cm n-type c-Si. This can be attributed primarily to a low interface defect density (Dit <1011 eV–1 cm–2). Consequently, the Al2O3 capping layer induced a high level of chemical passivation at the Si/SiO2 interface. Moreover, the stacks showed an exceptional stability during high-temperature firing processes and therefore provide a low temperature (=400 °C) alternative to thermally-grown SiO2.
Original languageEnglish
Pages (from-to)22-24
JournalPhysica Status Solidi : Rapid Research Letters
Volume1
DOIs
Publication statusPublished - 2011

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