Excellent Si surface passivation by atomic layer deposited (ALD) Al2O3 and its relation with Si heterojunction solar cells

W.M.M. Kessels

Excellent Si surface passivation by atomic layer deposited (ALD) Al2O3 and its relation with Si heterojunction solar cells

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Abstract

Abstract only.

Original language	English
Title of host publication	HETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, 1-2 February 2010, Utrecht, The Netherlands
Place of Publication	Utrecht, the Netherlands
Publication status	Published - 2010
Event	conference; HETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells; 2010-02-01; 2010-02-02 - Duration: 1 Feb 2010 → 2 Feb 2010

Conference

Conference	conference; HETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells; 2010-02-01; 2010-02-02
Period	1/02/10 → 2/02/10
Other	HETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells

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@inproceedings{c514ce18b2d64a3687cc8fad54cb4f13,

title = "Excellent Si surface passivation by atomic layer deposited (ALD) Al2O3 and its relation with Si heterojunction solar cells",

abstract = "Abstract only.",

author = "W.M.M. Kessels",

year = "2010",

language = "English",

booktitle = "HETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, 1-2 February 2010, Utrecht, The Netherlands",

note = "conference; HETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells; 2010-02-01; 2010-02-02 ; Conference date: 01-02-2010 Through 02-02-2010",

}

Kessels, WMM 2010, Excellent Si surface passivation by atomic layer deposited (ALD) Al2O3 and its relation with Si heterojunction solar cells. in HETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, 1-2 February 2010, Utrecht, The Netherlands. Utrecht, the Netherlands, conference; HETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells; 2010-02-01; 2010-02-02, 1/02/10.

Excellent Si surface passivation by atomic layer deposited (ALD) Al2O3 and its relation with Si heterojunction solar cells. / Kessels, W.M.M.
HETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, 1-2 February 2010, Utrecht, The Netherlands. Utrecht, the Netherlands, 2010.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Excellent Si surface passivation by atomic layer deposited (ALD) Al2O3 and its relation with Si heterojunction solar cells

AU - Kessels, W.M.M.

PY - 2010

Y1 - 2010

N2 - Abstract only.

AB - Abstract only.

M3 - Conference contribution

BT - HETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells, 1-2 February 2010, Utrecht, The Netherlands

CY - Utrecht, the Netherlands

T2 - conference; HETSI workshop on Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells; 2010-02-01; 2010-02-02

Y2 - 1 February 2010 through 2 February 2010

ER -

Excellent Si surface passivation by atomic layer deposited (ALD) Al2O3 and its relation with Si heterojunction solar cells

Abstract

Conference

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